Categories | AlN ceramic |
---|---|
Brand Name: | Coraynic |
Model Number: | AlN |
Certification: | RoHS,CE |
Place of Origin: | China |
MOQ: | 100 pcs |
Price: | US$1~99 |
Payment Terms: | L/C, T/T, Western Union |
Supply Ability: | 5000pcs per month |
Delivery Time: | 40 days |
Packaging Details: | sealed safe package |
Type: | Ceramic Plates,Ceramic Parts,Ceramic Rods |
Material: | Alumina Ceramic,ALN,Aluminum Nitride (AlN) |
Application: | Industrial Ceramic,Refractory,High-power circuits |
Color: | Grey |
Size: | Size Customized,According to your drawing |
Density: | ≥3.32g/cm3 |
Package: | wooden box,Vacuum Package |
Advantage: | Easy To Machianable,High Thermal conductivity |
Name: | Aluminum nitride ceramic cylindrical,aluminium nitride sheet,Aluminum nitride plate |
Item: | Good heat conduction,Direct Manufacturer,Aluminium Nitride Ceramic Wafter AlN Substrate |
Company Info. |
Coraynic Technology Limited |
View Contact Details |
Product List |
Aluminum Nitride(AlN) is a covalent bond compound, atomic crystal, a diamond-like
nitrate, hexagonal crystal system, non-toxic, white or gray-white,
theoretic bulk density 3.26g/cm3.
Aluminum nitride has the highest thermal conductivity of any
ceramic material, on a par with most metals; however, it also
provides electrical insulation. This makes it the top-of-the-range
choice for the most demanding of heat sink applications.
AlN ceramic has the following properties:
(1)High thermal conductivity (280W/m.K)
(2)High electricity resistance
(3)Low coefficient of heat expansion(4.5X10-6ºC)Good march with
Si(3.5~4×10-6ºC) and GaAs(6×10-6ºC)
(4)Excellent electricity properties(Dielectric constant, dielectric
loss, bulk resistivity, dielectric strength).
(5)Good mechanic properties
(6)Excellent corrosion resistance
(7) Good optical transmission property
AlN ceramic has become an ideal material for heat radiation and
package in industries of large scale IC, semiconductor module, high
power IC and high power components, been widely utilized in HBLED,
UVLED, high power IC, power module, RF/microwave communication,
automotive, microelectronic semiconductor, image transmission.
High-power LED package
Due to AlN's high thermal conductivity, bending strength, low bulk
density, low dielectric constant, the non-toxic and similar
coefficient of heat expansion to Si, AlN ceramics will replace
traditional materials for high power LED substrates, becoming a
preferred material for the substrate.
1) High Brightness LED (HB LED): Products with high power but small
sizes such as heat radiation base and frame for LED, LED headlight
for automotive, tube core of LED etc.
With the trend to produce LED with higher efficiency and higher power, it becomes critical to source new materials which have better heat radiation capability. AlN ceramic is an optimal option! |
θPower module
With high thermal conductivity, high electrical resistance,
excellent electricity properties (Dielectric constant, dielectric
loss, bulk resistivity, dielectric strength), AlN ceramics are
widely applied to large scale IC packages, silicon controlled
rectifiers, high-speed conversion module, audio frequency, and
microwave power amplifier, photo-electron IC module, IGBT module,
etc. Power modules with the AlN package have been utilized in areas
such as high-speed rail, new energy automotive, rail transit, solar
energy electricity generation, wind power generation, energy
storage of power system, smart grid, etc.
Core technologies of new energy automotive include power battery,
motor, and control system. A lot of IGBT has to be applied to its
control system, for instance, motor control system,
air-conditioning control system, battery charging system, etc. As
one of the core components, IGBT plays a very important role in the
new energy automotive industry.
Smart grid and energy internet require IGBT extensively for
flexible AC transmission, flexible HVDC, smart transmission, new
energy access, etc.
RF/Microwave communication
RF components are essential and vital components for
telecommunication equipment. Because of good thermal conductivity,
reliable insulative, low dielectric constant and insertion loss,
low thermal coefficient of expansion, AlN ceramics is becoming an
ideal material for RF/microwave communication industries, having a
solid market currently and huge potential in the future.
It is stable up to 1000C (1800°F) in air and 1900C (3450°F) in
inert atmospheres. The thermal expansion coefficient is lower than
that of common heat sink materials such as aluminum and alumina.
The thermal expansion coefficient is a close match to the expansion
of common semiconductor substrate materials, making it ideal for
the mounting of large semiconductor devices.
Aluminum Nitride is the very best ceramic commercially available
for heat sink applications. It is often used in microelectronics,
lighting, power, optics, and the ever-growing field of renewable
energy.
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