RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
Price:
negotiable
MOQ:
50 pieces
Delivery Time:
1-2 working days
Brand:
Mitsubishi
Product Description
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications
Description of RD06HVF1
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications
FEATURES of RD06HVF1
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION of RD06HVF1
For output stage of high power amplifiers in VHF band mobile radio sets.
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Company
Shenzhen Koben Electronics Co., Ltd.
Location
C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Contact Person
Zhu