BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC
07N10NS BSC070N10NS3GATMA1 Infineon's OptiMOS power MOSFET N-Channel 100 V 90A 114W PG-TDSON-8 IC
Description:
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS.
Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
Potential Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Benefits
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Specifications:
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Category
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Transistors - FETs, MOSFETs - Single
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Mfr
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Infineon Technologies
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Series
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OptiMOS™
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Package
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Tape & Reel (TR)
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Part Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current - Continuous Drain (Id) @ 25°C
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90A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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6V, 10V
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Rds On (Max) @ Id, Vgs
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7mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id
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3.5V @ 75µA
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Gate Charge (Qg) (Max) @ Vgs
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55 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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4000 pF @ 50 V
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FET Feature
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-
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Power Dissipation (Max)
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114W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PG-TDSON-8-1
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Package / Case
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8-PowerTDFN
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Base Product Number
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BSC070
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| Parametrics | BSC070N10NS3G |
| Ciss | 3000 pF |
| Coss | 520 pF |
| ID (@25°C) max | 90 A |
| IDpuls max | 360 A |
| Operating Temperature min max | -55 °C 150 °C |
| Ptot max | 114 W |
| Package | SuperSO8 5x6 |
| Polarity | N |
| QG (typ @10V) | 42 nC |
| RDS (on) (@10V) max | 7 mΩ |
| Rth | 1.1 K/W |
| VDS max | 100 V |
| VGS(th) min max | 2.7 V 2 V 3.5 V |
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