Silicon Photodiodes S1337-66BQ S1337-33BQ Low Capacitance
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Product Description
Silicon photodiodes S1337-66BQ
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance
| Maximum Sensitivity Wavelength (Typical) | 960 nm |
| Dark current (max) | 100 pA |
| Rise Time (Typical) | 1 μs |
| Junction Capacitance (typical) | 380 pF |
| Noise equivalent power (typical) | 1.3×10-14 W/Hz1/2 |
Silicon photodiodes S1337-33BQ
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance
| Light-receiving side | 2.4 × 2.4 mm |
| encapsulation | ceramics |
| refrigeration | Non-cooled |
| Reverse voltage (max) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Light sensitivity (typical) | 0.5 A/W |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu