S1337-1010BQ Silicon Photodiode with 960nm Peak Wavelength and 1100pF Capacitance for UV to IR Photometry
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Brand:
Hamamatsu
Product Description
Product Overview
The S1337-1010BQ Silicon Photodiode delivers exceptional precision photometry performance across ultraviolet to infrared wavelengths, featuring low capacitance and high UV sensitivity for demanding measurement applications.
Key Features & Performance
- Broad spectral range coverage from UV to IR wavelengths
- High UV sensitivity: Quantum Efficiency = 75% at λ=200 nm
- Low capacitance design for fast response times
- Optimized for precision photometric measurements
- Stable performance at Ta=25°C operating temperature
Technical Specifications
| Parameter | Value |
|---|---|
| Peak Sensitivity Wavelength (Typical) | 960 nm |
| Sensitivity (Typical) | 0.5 A/W |
| Dark Current (Maximum) | 200 pA |
| Rise Time (Typical) | 3 μs |
| Junction Capacitance (Typical) | 1100 pF |
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu