IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET
IRF2907ZS-7PPbF
HEXFET® Power MOSFET
Features
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications.
Absolute Maximum Ratings
| Parameter | Max | Units | |
|---|---|---|---|
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 180 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 120 | A |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) | 160 | A |
| IDM | Pulsed Drain Current | 700 | A |
| PD @TC = 25°C | Maximum Power Dissipation | 300 | W |
| Linear Derating Factor | 2.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 160 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 410 | mJ |
| IAR | Avalanche Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ , TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) | °C |
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