RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A)
Price:
Negotiate
MOQ:
10pcs
Delivery Time:
1 day
Product Description
Switching (200V, 10A)
RDN100N20
Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
Application
Switching
Structure
Silicon N-channel
MOS FET
Absolute maximum ratings (Ta=25°C)
| Parameter | Symbol | Limits | Unit | |
| Drain-Source Voltage | VDSS | 200 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Drain Current | Continuous | ID | 10 | A |
| Pulsed | IDP *1 | 40 | A | |
| Reverse Drain Current | Continuous | IDR | 10 | A |
| Pulsed | IDRP *1 | 40 | A | |
| Avalanche Current | IAS *2 | 10 | A | |
| Avalanche Energy | EAS *2 | 120 | mJ | |
| Total Power Dissipation (TC=25°C) | PD | 35 | W | |
| Channel Temperature | Tch | 150 | °C | |
| Storage Temperature | Tstg | −55 to +150 | °C | |
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
External dimensions (Unit : mm)
Equivalent circuit
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Stock Offer (Hot Sell)
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Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo