NX2301P,215 P-Channel MOSFET SOT23 20V 2A 120mΩ Power Transistor for SMD Applications
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
Nexperia
Product Description
NX2301P,215 P-Channel MOSFET Overview
The NX2301P,215 is a high-performance P-Channel MOSFET from Nexperia, designed for SMD applications requiring efficient power management and switching capabilities.
Key Electrical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 20V |
| Continuous Drain Current (Id) | 2A |
| Drain-Source On Resistance (Rds On) | 120mΩ |
| Gate-Source Threshold Voltage (Vgs th) | 500mV |
| Power Dissipation (Pd) | 710mW |
| Operating Temperature Range | -55°C to +150°C |
Product Features
- P-Channel enhancement mode MOSFET with 1 channel configuration
- Compact SOT-23-3 package for space-constrained applications
- Low gate charge of 4.5nC for fast switching performance
- Gate-source voltage range: -8V to +8V
- Lightweight design at just 8mg per unit
- Available in reel, cut tape, and MouseReel packaging options
Technical Documentation
Complete technical specifications and application notes available in the product datasheet:
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe