PMV213SN,215 N-Channel MOSFET SOT23 100V 1.9A 250mΩ Power Transistor
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
Nexperia
Product Description
PMV213SN,215 N-Channel MOSFET Overview
High-performance N-Channel MOSFET from Nexperia featuring 100V breakdown voltage and 1.9A continuous drain current in compact SOT-23-3 package.
Key Electrical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 1.9 A |
| Drain-Source On Resistance (Rds On) | 250 mΩ |
| Gate-Source Threshold Voltage (Vgs th) | 2 V |
| Gate Charge (Qg) | 7 nC |
| Power Dissipation (Pd) | 2 W |
Product Features
- N-Channel Enhancement Mode MOSFET technology
- SMD/SMT installation compatible with SOT-23-3 package
- Wide operating temperature range: -55°C to +150°C
- Low gate charge for efficient switching performance
- Compact design with unit weight of only 8 mg
- Available in reel packaging for automated assembly
Technical Documentation
Complete datasheet and technical specifications available for download:
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe