P Channel MOSFET Bruckewell MS60P03 60V with low reverse transfer capacitance and fast switching

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Product Description

Product Overview

The MS60P03 is a high-performance P-Channel 60V MOSFET designed for high efficiency and fast switching applications. Featuring a super high-density cell design for low RDS(ON) and reduced gate charge, this device is ideal for motor control, networking, and LED applications. It meets RoHS and Green Product requirements and offers improved dv/dt capability and low reverse transfer capacitance.

Product Attributes

Brand: Bruckewell Technology Corporation
Product Series: MS60P03
Channel Type: P-Channel
Voltage Rating: 60V (Drain-Source)
Package Type: SOT-23
Certifications: RoHS Compliant, Green Device Available
Packing: 3,000/Reel

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VDS	Drain-Source Voltage				-60	V
VGS	Gate-Source Voltage				20	V
ID	Continuous Drain Current (TA =25C)				-3	A
ID	Continuous Drain Current (TA =70C)				-2.3	A
IDM	Pulsed Drain Current (TA =25C)				-12	A
PD	Power Dissipation (TA =25C)				2	W
TJ/TSTG	Operating Junction and Storage Temperature		-55		+150	C
Thermal Resistance Ratings
RJA	Maximum Junction-to-Ambient				125	C/W
RJC	Maximum Junction-to-Case				80	C/W
Electrical Characteristics (TJ =25C unless otherwise specified)
VGS (th)	Gate Threshold Voltage	VDS =VGS, ID =-250A	-1.0		-2.5	V
BVDSS	Drain-Source Breakdown Voltage	VGS =0V, ID =-250A	-60			V
IGSS	Gate-Source Leakage Current	VDS =0V, VGS =20V			100	nA
IDSS	Drain-Source Leakage Current	VDS =-48V, VGS =0V, TJ =25C			-1	A
IDSS	Drain-Source Leakage Current	VDS =-48V, VGS =0V, TJ =125C			-5	A
RDS (on)	Static Drain-Source On-Resistance	VGS =-10V, ID =-2A		120	140	m
RDS (on)	Static Drain-Source On-Resistance	VGS =-4.5V, ID =-1.5A		150	200	m
VSD	Diode Forward Voltage	IS =-1.0A, VGS =0V, TJ =25C			-1.2	V
IS	Continuous Source Current (Diode)	VG =VD =0V, Force Current			-3.2	A
Dynamic and switching Characteristics
Qg	Total Gate Charge	VDS =-20V ID =-2A VGS =-4.5V		5.9		nC
Qgs	Gate-Source Charge			2.9		nC
Qgd	Gate-Drain Charge			1.8		nC
td(on)	Turn-On Delay Time	VDD =-12V ID =-1A VGS =-10V RG =3.3		10		ns
tr	Rise Time			17		ns
td(off)	Turn-Off Delay Time			22		ns
tf	Fall Time			21		ns
CISS	Input Capacitance	VDS =-15V VGS =0V f =1.0MHz		715		pF
COSS	Output Capacitance			51		pF
CRSS	Reverse Transfer Capacitance			34		pF