P Mosfet Horizontal Output High Power Transistor SOT323 3D 3H 3M RoHS Approval
p mosfet horizontal output transistor SOT323 3D 3H 3M field effect transistor
TYPE NUMBERMARKING CODE:
BC856W: 3D*
BC856AW: 3A*
BC856BW: 3B*
BC857W: 3H*
BC857AW: 3E*
BC857BW: 3F*
BC857CW: 3G*
BC858W: 3M*
Field effect transistor features:
- Low current(max.100mA)
- Low voltage(max.65V)
- base-emitter voltage:-600~-700mV
- collector capacitance:3pF; emitter capacitance=12pF
- hFE=125-800
- noise figure=10dB
- PNP transistor in a SOT-323 plastic package.
- NPN complements: BC846W, BC847W and BC848W.
Horizontal output transistor applications:
- General purpose switching and amplification.
- It can convert AC power into pulse DC power in a single direction, equivalent to a rectifier diode
- After the diode is turned on, the forward voltage drop remains basically unchanged, which can limit the signal amplitude to a certain
- Plays a role in the inductive load of switching power supply and inductive load such as relay.
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
| PARAMETER | SYMBOL | CONDITIONS | MIN. | MAX. | UNIT |
| collector-base voltage | VCBO | open emitter | |||
| BC856W | − | −80 | V | ||
| BC857W | − | −50 | V | ||
| BC858W | − | −30 | V | ||
| collector-emitter voltage | VCEO | open base | |||
| BC856W | − | −65 | V | ||
| BC857W | − | −45 | V | ||
| BC858W | − | −30 | V | ||
| emitter-base voltage | VEBO | open collector | − | −5 | V |
| collector current (DC) | IC | − | −100 | mA | |
| peak collector current | ICM | − | −200 | mA | |
| peak base current | IBM | − | −200 | mA | |
| total power dissipation | Ptot | Tamb ≤ 25 °C; note 1 | − | 200 | mW |
| storage temperature | Tstg | −65 | +150 | °C | |
| junction temperature | Tj | − | 150 | °C | |
| operating ambient temperature | Tamb | −65 | +150 | °C |
Note
- Refer to SOT323 standard mounting conditions.
CHARACTERISTICS Tamb = 25 °C; unless otherwise specified.
| PARAMETER | SYMBOL | CONDITIONS | MIN. | TYP. | MAX. | UNIT |
| collector-base cut-off current | ICBO | VCB = −30 V; IE = 0 | − | −1 | −15 | nA |
|
VCB = −30 V; IE = 0; Tj = 150 °C |
− | − | −4 | μA | ||
| emitter-base cut-off current | IEBO | VEB = −5 V; IC = 0 | − | − | −100 | nA |
| DC current gain | hFE | IC = −2 mA; VCE = −5 V | ||||
| BC856W | 125 | − | 475 | |||
| BC857W; BC858W | 125 | − | 800 | |||
| BC856AW; BC857AW | 125 | − | 250 | |||
| BC856BW; BC857BW | 220 | − | 475 | |||
| BC857CW | 420 | − | 800 | |||
| collector-emitter saturation voltage | VCEsat | IC = −10 mA; IB = −0.5 mA | − | −75 | −300 | mV |
| IC = −100 mA; IB = −5 mA;note 1 | − | −250 | −600 | mV | ||
| base-emitter saturation voltage | VBEsat | IC = −10 mA; IB = −0.5 mA | − | −700 | − | mV |
| IC = −100 mA; IB = −5 mA;note 1 | − | −850 | − | mV | ||
| base-emitter voltage | VBE | IC = −2 mA; VCE = −5 V | −600 | −650 | −750 | mV |
| IC = −10 mA; VCE = −5 V | − | − | −820 | mV | ||
| collector capacitance | Cc | VCB = −10 V; IE = Ie = 0;f = 1 MHz | − | − | 3 | pF |
| emitter capacitance | Ce | VEB = −0.5 V; IC = Ic = 0;f = 1 MHz | − | − | 12 | pF |
| transition frequency | fT | VCE = −5 V; IC = −10 mA;f = 100 MHz | 100 | − | − | MHz |
| noise figure | F | IC = −200 μA; VCE = −5 V;RS = 2 kΩ; f = 1 kHz;B = 200 Hz | − | − | 10 |
dB
|
Note:
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
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