G-Resource Electronics Co.,Ltd
                                                                                                           
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17 Years
Since 2009
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Fast Recovery Rectifier Diode ER2A ER2B ER2C ER2D ER2E ER2G ER2J DO-214AC SMA

Price Negotiable
Price: negotiable
MOQ: 100PCS
Delivery Time: 1-2 WORK DAYS
Brand: THINKCHIP
Product Description
FEATURES
 Glass Passivated Die Construction
 Super-Fast Recovery Time For High Efficiency
 Low Forward Voltage Drop and High Current Capability
 Ideally Suited for Automated Assembly
 Plastic Material: UL Flammability Classification Rating 94V-0
MECHANICAL DATA
 Case: DO-214AA Molded plastic
 Terminals: Pure tin plated, lead free
 Polarity: Indicated by cathode band
 Weight: 93mg (approx.)

ER2A ER2B ER2C ER2D ER2E ER2G ER2J Fast Recorvery Diode Fast Switching Diode DO-214AC SMA

 

 

Type Package VRRM(V) IO(A) IFSM(A) Trr(ns) VF(V) IR(uA)
ER2A SMB 50 2 50 35 0.95 5
ER2B SMB 100 2 50 35 0.95 5
ER2C SMB 150 2 50 35 0.95 5
ER2D SMB 200 2 50 35 0.95 5
ER2E SMB 300 2 50 35 1.25 5
ER2G SMB 400 2 50 35 1.25 5
ER2J SMB 600 2 50 35 1.7 5
ER1A SMA 50 1 30 35 0.95 5
ER1B SMA 100 1 30 35 0.95 5
ER1C SMA 150 1 30 35 0.95 5
ER1D SMA 200 1 30 35 0.95 5
ER1E SMA 300 1 30 35 1.25 5
ER1G SMA 400 1 30 35 1.25 5
ER1J SMA 600 1 30 35 1.7 5
ER3A SMC 50 3 100 35 0.95 5
ER3B SMC 100 3 100 35 0.95 5
ER3C SMC 150 3 100 35 0.95 5
ER3D SMC 200 3 100 35 0.95 5
ER3E SMC 300 3 100 35 1.25 5
ER3G SMC 400 3 100 35 1.25 5
ER3J SMC 600 3 100 35 1.7 5

 

Fast recovery diode (FRD) is a kind of semiconductor diode with good switching characteristics and short reverse recovery time, which is mainly used in switching power supply, PWM pulse width modulator, inverter and other electronic circuits, as a high frequency rectifier diode, secondary diode or damping diode. The internal structure of fast recovery diode is different from ordinary p-junction diode. It belongs to PIN junction diode, that is, base region I is added between p-type silicon material and n-type silicon material to form PIN silicon chip. Because the base area is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage value) is high.

 

ER2A ER2B ER2C ER2D ER2E ER2G ER2J Product details


 

 

 

 

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Company G-Resource Electronics Co.,Ltd
Location #17J, C Block, Huaqiang Plaza, Futian, Shenzhen 518033
Contact Person Jenny chan

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