JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver

GENERAL DESCRIPTION
The JY4N8M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on‐resistance with low gate charge. These features combine
to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.

FEATURES
● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

APPLICATIONS
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
 

DOWNLOAD JY4N8M USER MANUAL