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PD57030-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black

Price Negotiable
Price: Negotiable
MOQ: 1000
Delivery Time: 5-8 work days
Brand: ST
Product Description
Product name:PD57030-E
Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors
Transistor Polarity: N-Channel Technology: Si
Id-Continuous Drain Current: 4 A Vds-drain-source breakdown voltage: 65 V
Operating frequency: 1 GHz Gain: 14 dB
Output power: 30W Minimum operating temperature: - 65 C
Maximum operating temperature: + 150 C Installation style: SMD/SMT
Package/Case: PowerSO-10RF-Formed-4 Package: Tube
Brand: STMicroelectronics Channel Mode: Enhancement
Configuration: Single Height: 3.5 mm
Length: 7.5 mm Moisture Sensitivity: Yes
Pd-Power Dissipation: 52.8 W Product Type: RF MOSFET Transistors
Series: PD57030-E Factory Packing Quantity: 400
Subcategory: MOSFETs Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 20 V Unit weight: 3 g

 

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