IPD082N10N3 is an N channel MOSFET transistor. The following are its applications, conclusions, and parameters:
Application:
Used as a high-voltage and high-power load switch
Used as a switch for converters and regulators
Conclusion:
High voltage capability: Vds=100V
Low conduction resistance: Rds (on)=8.2m Ω (typ.)
Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.)
High temperature performance: can operate at temperatures up to 175 ℃
Complies with RoHS directives and lead-free requirements
Parameters:
Vds (drain source voltage): 100V
Vgs (gate source voltage): ± 20V
Id (drain current): 80A
Rds (on) (conduction resistance): 8.2m Ω (typ.)
Qg (gate charge): 135nC (typ.)
Td (on) (start delay time): 16ns (typ.)
Td (off) (shutdown delay time): 60ns (typ.)
Tj (junction temperature): 175 ℃
Complies with RoHS directives and lead-free requirements.