Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere

Price Negotiable

Price: Negotiation

MOQ: 100pcs

Delivery Time: 1 Day

Brand: MIC

Product Description

Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere

Feature

Low coat construction

Low forward voltage drop

Low reverse leakageHigh forward surge current capability

High temperature soldering guaranteed:

260℃/10 secods/.375”(9.5mm)lead leCM GROUPh at 5 lbs(2.3kg) tension

MECHANICAL DATA

Case: Transfer molded plastic

poxy: UL94V-O rate flame retardant

Polarity: Color band denotes cathode end

Lead: Plated axial lead, solderable per MIL-STD-202E method 208C

Mounting position: Any

Weight: 0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

· Ratings at 25OC ambient temperature unless otherwise specified · Single Phase, half wave, 60Hz, resistive or inductive load · For capacitive load derate current by 20%

Maximum RMS Voltage	SYMBOLS	1N4001	1N4002	1N4003	1N4004	1N4005	1N4006	1N4007	UNIT
Maximum DC Blocking Voltage	Vrrm	50	100	200	400	600	800	1000	V
Maximum Average Forward Rectified Current 0.375”(9.5mm) lead leCM GROUPh at TA= 25℃	Vrms	35	70	140	280	420	560	700	V
Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method)	V_DC	50	100	200	400	600	800	100	V
Maximum Instantaneous Forward Voltage @ 1.0A	(Av)	1.0							A
Maximum DC Reverse TA = 25℃ Current at Rated DC Blocking TA=100V Voltage per element	Ifsm	5.0							µA
	Vf	50							µA
Maximum Full Load Reverse Current, full cycle average 0.375”(9.5mm)lead leCM GROUPh at TL=75℃	Ir	30							µA
Typical Junction Capacitance (Note 1)	_Cj	13							µA
Typical Thermal Resistance (Note 2)	RθJA	50							℃ /w
Operating Junction Temperature Range	T_j	-55 to +150							℃
Storage Temperature Range	T_STG	-55 to +150							℃