NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor
NDT456P P-Channel Enhancement Mode Field Effect Transistor
Features
♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V
♦High density cell design for extremely low RDS(ON)
♦High power and current handling capability in a widely used surface mount package.
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
| Symbol | Parameter | NDT456P | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| TJ ,TSTG | Operating and Storage Temperature Range | 65 to 150 | °C |
| RqJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 42 | °C/W |
| RqJC | Thermal Resistance, Junction-to-Case (Note 1) | 12 | °C/W |
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