BYV32EB-200 Dual rugged ultrafast Rectifier Diode 200 V repetitive peak reverse voltage
Price:
Negotiate
MOQ:
20pcs
Delivery Time:
1 day
Product Description
BYV32EB-200 Dual rugged ultrafast Rectifier Diode 200 V repetitive peak reverse voltage
General description
Ultrafast dual epitaxial rectifier diode in a SOT404 (D2PAK) surface-mountable plastic package.
Features and benefits
- High reverse voltage surge capability „
- High thermal cycling performance „
- Low thermal resistance „
- Soft recovery characteristic minimizes power consuming oscillations „
- Surface-mountable package „
- Very low on-state loss
Applications „
Output rectifiers in high-frequency switched-mode power supplies
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VRRM | repetitive peak reverse voltage | - | 200 | V | |
| VRWM | crest working reverse voltage | - | 200 | V | |
| VR | reverse voltage | DC | - | 200 | V |
| IO(AV) | average output current | square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 | - | 20 | A |
| IFRM | repetitive peak forward current | δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; per diode | - | 20 | A |
| IFSM | non-repetitive peak forward current | tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode | - | 137 | A |
| tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode | - | 125 | A | ||
| IRRM | repetitive peak reverse current | δ = 0.001; tp = 2 µs | - | 0.2 | A |
| IRSM | non-repetitive peak reverse current | tp = 100 µs | - | 0.2 | A |
| Tstg | storage temperature | -40 | 150 | °C | |
| Tj | junction temperature | - | 150 | °C | |
| VESD | electrostatic discharge voltage | HBM; C = 250 pF; R = 1.5 kΩ; all pins | - | 8 | kV |
Stock Offer (Hot Sell)
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Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo