STW34NM60ND Power Mosfet Transistor Integrated Circuit Chip Program Memory

Price Negotiable

Price: Negotiation

MOQ: 10pcs

Delivery Time: 1 Day

Brand: ST

Product Description

N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET

(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247

Features

Order codes

VDSS @TJ max.

RDS(on) max.

STB34NM60ND

STF34NM60ND

STP34NM60ND

STW34NM60ND

650V

0.110 Ω

29A

■ The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities

DESCRIPTION

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters

ABSOLUTE MAXIMUM RATINGS(1)

IF(AV) 12 A

VRRM 600 V

IRM (typ) 7 A

Tj 175°C

VF (typ) 1.4 V

trr (max) 25 ns

PART OF STOCK

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FDS6990A	1500	FSC	15+	SOP-8
NDS9952A	1500	FSC	15+	SOP-8
SN65HVD485EDR	1500	TI	16+	SOP-8
SMBJ8.5CA	7500	VISHAY	16+	SMB
PIC24FJ16GA004-I/PT	1500	MICROCHIP	13+	TQFP-44
C.I TLC072CDGNR	5000	TI	05+	MSOP-8
C.I SN74LS374N	2000	TI	15+	DIP-20
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C.I TL074CN	1000	TI	12+	DIP-14
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C.I WS79L05	100000	WS	16+	TO-92
RES RL1206FR-070R75L	100000	YAGEO	16+	SMD1206
RES RC1206FR-071R5L	500000	YAGEO	16+	SMD1206
RES RC1206FR-071R2L	500000	YAGEO	16+	SMD1206
RES RL1206FR-070R68L	1000000	YAGEO	16+	SMD1206
RES RC0402FR-0722KL	3000000	YAGEO	16+	SMD0402
RES RC0402FR-0756RL	2000000	YAGEO	16+	SMD0402
RES RC0402FR-0724RL	2000000	YAGEO	16+	SMD0402
RES RC1206JR-072ML	500000	YAGEO	16+	SMD1206
CAP 1206 22PF 1KV NP0 CL31C220JIFNFNE	600000	SAMSUNG	16+	SMD1206