IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET
IXFN38N100Q2
HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated, Low Qg , Low Intrinsic Rg High dV/dt, Low trr
VDSS = 1000 V
ID25 = 38 A
RDS(on)= 0.25 Ω
trr ≤ 300 ns
Features
• Double metal process for low gate resistance
• miniBLOC, with Aluminium nitride isolation
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Switched-mode and resonant-mode power supplies
• DC choppers
• Pulse generators
Advantages
• Easy to mount
• Space savings
• High power density
Maximum Ratings
| Symbol | Test Conditions | MAX. | UNIT |
|---|---|---|---|
| VDSS | TJ = 25°C to 150°C | 1000 | V |
| VDGR | TJ = 25°C to 150°C; RGS = 1 MΩ | 1000 | V |
| VGS | Continuous | ±30 | V |
| VGSM | Transient | ±40 | V |
| ID25 | TC = 25°C | 38 | A |
| IDM | TC = 25°C, pulse width limited by TJM | 152 | A |
| IAR | TC = 25°C | 38 | A |
| EAR | TC = 25°C | 60 | mJ |
| EAS | TC = 25°C | 5.0 | J |
| dv/dt |
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω |
20 | V/ns |
| PD | TC = 25°C | 890 | W |
| TJ | -55 ... +150 | °C | |
| TJM | 150 | °C | |
| Tstg | -55 ... +150 | °C | |
| VISOL | 50/60 Hz, RMS, t = 1 minute | 2500 | V |
| Md |
Mounting torque Terminal connection torque |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Stock Offer (Hot Sell)
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