High-Performance Power Transistor

IRF540NPBF Description: Superior Design for Advanced Electronics

If you're looking for an advanced power transistor for your electronics projects, look no further than the IRF540NPBF. This high-performance transistor is designed to deliver exceptional results, with a superior design that ensures optimal efficiency and reliability. Featuring a high voltage capability of up to 100V, the IRF540NPBF can operate in a wide range of applications. It also boasts a high current capability of up to 33A, making it ideal for use in demanding circuits that require powerful switching capabilities.

But what really sets the IRF540NPBF apart is its advanced design. With a low on-state resistance and fast switching speeds, this transistor delivers exceptionally efficient and reliable performance. It also features a rugged construction that makes it resistant to damage from environmental factors like temperature and vibration.

So if you're looking for a high-performance power transistor that can deliver superior results in even the most demanding applications, choose the IRF540NPBF. With its exceptional design and reliable performance, it's the perfect choice for advanced electronics projects.

Technical features:

• Technology: Si
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 100 V
• Id - Continuous Drain Current: 33 A
• Rds On - Drain-Source Resistance: 44 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 47.3 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 140 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Height: 15.65 mm
• Length: 10 mm
• Product Type: MOSFET