MT29F2G08ABAEAH4-IT:E IC FLASH 2GBIT PARALLEL 63VFBGA Micron Technology Inc.
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Micron Technology Inc.
Product Description
Product Details
General Description
Micron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant1• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
–
tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
• RESET (FFh) required as first command after power
on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Product Category | Memory ICs |
| Categories | Memory |
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Packaging | Tray |
| Part-Status | Active |
| Memory-Type | Non-Volatile |
| Memory-Format | FLASH |
| Technology | FLASH - NAND |
| Memory-Size | 2Gb (256M x 8) |
| Write-Cycle-Time-Word-Page | - |
| Memory-Interface | Parallel |
| Voltage-Supply | 2.7 V ~ 3.6 V |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Mounting-Type | Surface Mount |
| Package-Case | 63-VFBGA |
| Supplier-Device-Package | 63-VFBGA (9x11) |
| Base-Part-Number | MT29F2G08 |
Descriptions
FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 63-VFBGA (9x11)
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 63-Pin VFBGA Tray
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao