IS43DR16640C-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA ISSI, Integrated Silicon Solution Inc
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
ISSI, Integrated Silicon Solution Inc
Product Description
Product Details
FEATURES
• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system frequency up to 933 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200 MHz in DLL off mode
• Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | Memory ICs |
| Manufacturer | ISSI |
| Product-Category | DRAM |
| RoHS | Details |
| Brand | ISSI |
| Manufacturer Part# | Description | Manufacturer | Compare |
| MT47H64M16NF-25E:M Memory |
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | IS43DR16640C-25DBL vs MT47H64M16NF-25E:M |
| MT47H64M16NF-25EIT:M Memory |
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | IS43DR16640C-25DBL vs MT47H64M16NF-25EIT:M |
| IS43DR16640C-25DBLA2 Memory |
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | Integrated Silicon Solution Inc | IS43DR16640C-25DBL vs IS43DR16640C-25DBLA2 |
| IS43DR16640C-25DBLA1 Memory |
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | Integrated Silicon Solution Inc | IS43DR16640C-25DBL vs IS43DR16640C-25DBLA1 |
Descriptions
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ns 84-TWBGA (8x12.5)
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao