MT41J128M16HA-125 IT:D IC DRAM 2GBIT PARALLEL 96FBGA Micron Technology Inc.
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Micron Technology Inc.
Product Description
Product Details
DDR3 SDRAM
2Gb: x4, x8, x16 DDR3 SDRAM
Features
• VDD= VDDQ= 1.5V ±0.075V• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS READ latency (CL)
• Posted CAS additive latency (AL)
• Programmable CAS WRITE latency (CWL) based on tCK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 0°C to 95°C
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C
• Self refresh temperature (SRT)
• Write leveling
• Multipurpose register
• Output driver calibration
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tray |
| Package-Case | 96-TFBGA |
| Operating-Temperature | -40°C ~ 95°C (TC) |
| Interface | Parallel |
| Voltage-Supply | 1.425 V ~ 1.575 V |
| Supplier-Device-Package | 96-FBGA (9x14) |
| Memory Capacity | 2G (128M x 16) |
| Memory-Type | DDR3 SDRAM |
| Speed | 800MHz |
| Format-Memory | RAM |
Descriptions
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 13.75ns 96-FBGA (9x14)
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao