CY7C1470V25-200BZI IC SRAM 72MBIT PARALLEL 165FBGA Infineon Technologies
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Infineon Technologies
Product Description
Product Details
Functional Description
The CY7C1471V33 is 3.3 V, 2 M × 36 synchronous flow through burst SRAMs designed specifically to support unlimited true back-to-back read or write operations without the insertion of wait states. The CY7C1471V33 is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive read or write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent write-read transitions.
Features
■ No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles■ Supports up to 133 MHz bus operations with zero wait states
■ Data is transferred on every clock
■ Pin compatible and functionally equivalent to ZBT™ devices
■ Internally self timed output buffer control to eliminate the need to use OE
■ Registered inputs for flow through operation
■ Byte Write capability
■ 3.3 V/2.5 V I/O supply (VDDQ)
■ Fast clock-to-output times
❐ 6.5 ns (for 133-MHz device)
■ Clock enable (CEN) pin to enable clock and suspend operation
■ Synchronous self timed writes
■ Asynchronous output enable (OE)
■ CY7C1471V33 available in JEDEC-standard Pb-free 100-pin TQFP
■ Three chip enables (CE1, CE2, CE3) for simple depth expansion
■ Automatic power down feature available using ZZ mode or CE deselect
■ Burst capability – linear or interleaved burst order
■ Low standby power
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Cypress Semiconductor |
| Product Category | Memory ICs |
| Series | NoBL™ |
| Packaging | Tray Alternate Packaging |
| Package-Case | 165-LBGA |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 2.375 V ~ 2.625 V |
| Supplier-Device-Package | 165-FBGA (15x17) |
| Memory Capacity | 72M (2M x 36) |
| Memory-Type | SRAM - Synchronous |
| Speed | 200MHz |
| Format-Memory | RAM |
Descriptions
SRAM - Synchronous Memory IC 72Mb (2M x 36) Parallel 200MHz 3ns 165-FBGA (15x17)
SRAM Chip Sync Quad 2.5V 72M-Bit 2M x 36 3ns 165-Pin FBGA Tray
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao