Sanhuang electronics (Hong Kong) Co., Limited
                                                                                                           
Verified Supplier
21 Years
Since 2005
Menu

MT41K256M8DA-125:K IC DRAM 2GBIT PARALLEL 78FBGA Micron Technology Inc.

Price Negotiable
Price: Based on current price
MOQ: 1
Delivery Time: 3-5 work days
Brand: Micron Technology Inc.
Product Description

Product Details

[MCL]

 

BROADBAND CW TWT LAB AMPLIFIER

FOR RADAR, EMC AND EW TESTING

 

 

The MT4100 broadband amplifier is leveraged around the field-proven MT4000 TWT architecture. With its

modular design, compact and efficient packaging, the MT4100 will exhibit unsurpassed reliability.

 

 

FEATURES:

Extensive Diagnostic Capabilities
Advanced Thermal Design
Compact Size
Ducted Cooling
Quiet Operation

 

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 78-TFBGA
Operating-Temperature 0°C ~ 95°C (TC)
Interface Parallel
Voltage-Supply 1.283 V ~ 1.45 V
Supplier-Device-Package 78-FBGA (8x10.5)
Memory Capacity 2G (256M x 8)
Memory-Type DDR3L SDRAM
Speed 800MHz
Format-Memory RAM
Mfr Micron Technology Inc.
Package Tray
Product-Status Active
Memory-Type Volatile
Memory-Format DRAM
Technology SDRAM - DDR3L
Memory-Size 2Gb (256M x 8)
Memory-Interface Parallel
Clock-Frequency 800 MHz
Write-Cycle-Time-Word-Page -
Access-Time 13.75 ns
Voltage-Supply 1.283V ~ 1.45V
Mounting-Type Surface Mount
Package-Case 78-TFBGA
Base-Product-Number MT41K256M8

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part# Description Manufacturer Compare
H5TQ2G83CFR-H9C
Memory
DDR DRAM, 256MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8DA-125:K vs H5TQ2G83CFR-H9C
MT41K256M8DA-125IT:K
Memory
DDR DRAM, 256MX8, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc MT41K256M8DA-125:K vs MT41K256M8DA-125IT:K
H5TQ2G83FFR-PBC
Memory
DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, FBGA-78 SK Hynix Inc MT41K256M8DA-125:K vs H5TQ2G83FFR-PBC
H5TQ2G83CFR-PBC
Memory
DDR DRAM, 256MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8DA-125:K vs H5TQ2G83CFR-PBC
H5TC2G83CFR-PBA
Memory
DDR DRAM, 256MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8DA-125:K vs H5TC2G83CFR-PBA
MT41K256M8DA-125:M
Memory
DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc MT41K256M8DA-125:K vs MT41K256M8DA-125:M
MT41K256M8DA-107:K
Memory
DDR DRAM, 256MX8, 0.195ns, CMOS, PBGA78, 8 X 10.50 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-78 Micron Technology Inc MT41K256M8DA-125:K vs MT41K256M8DA-107:K
H5TQ2G83DFR-RDC
Memory
DDR DRAM, 256MX8, 0.195ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8DA-125:K vs H5TQ2G83DFR-RDC
H5TQ2G83EFR-PBC
Memory
DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8DA-125:K vs H5TQ2G83EFR-PBC
H5TQ2G83DFR-PBC
Memory
DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8DA-125:K vs H5TQ2G83DFR-PBC

Descriptions

SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 800MHz 13.75ns 78-FBGA (8x10.5)
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin FBGA

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Sanhuang electronics (Hong Kong) Co., Limited
Location No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person Zhao

Request A Quote

Please check your email address.
Your message must be at least 20 characters.