MT47H128M4CF-25E:G IC DRAM 512MBIT PARALLEL 60FBGA Micron Technology Inc.
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Micron Technology Inc.
Product Description
Product Details
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banksMT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tray |
| Package-Case | 60-TFBGA |
| Operating-Temperature | 0°C ~ 85°C (TC) |
| Interface | Parallel |
| Voltage-Supply | 1.7 V ~ 1.9 V |
| Supplier-Device-Package | 60-FBGA (8x10) |
| Memory Capacity | 512M (128Mx4) |
| Memory-Type | DDR2 SDRAM |
| Speed | 2.5ns |
| Format-Memory | RAM |
Descriptions
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 400MHz 400ps 60-FBGA (8x10)
DRAM Chip DDR2 SDRAM 512Mbit 128Mx4 1.8V 60-Pin FBGA
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao