IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
ISSI, Integrated Silicon Solution Inc
Product Description
Product Details
DESCRIPTION
TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
FEATURES
• TTL compatible inputs and outputs; tristate I/O• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | IC Chips |
| Series | - |
| Packaging | Tube |
| Package-Case | 42-BSOJ (0.400", 10.16mm) |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3 V ~ 3.6 V |
| Supplier-Device-Package | 42-SOJ |
| Memory Capacity | 16M (1M x 16) |
| Memory-Type | DRAM - EDO |
| Speed | 50ns |
| Format-Memory | RAM |
Descriptions
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao