IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
ISSI, Integrated Silicon Solution Inc
Product Description
Product Details
DESCRIPTION
The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tray |
| Package-Case | 165-LBGA |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Common I/O |
| Voltage-Supply | 1.71 V ~ 1.89 V |
| Supplier-Device-Package | 165-LFBGA (13x15) |
| Memory Capacity | 18M (1M x 18) |
| Memory-Type | SRAM - Synchronous, DDR II |
| Speed | 300MHz |
| Format-Memory | RAM |
Descriptions
SRAM - Synchronous, DDR II Memory IC 18Mb (1M x 18) Parallel 300MHz 165-LFBGA (13x15)
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
SRAM 18Mb, 1M x 18 DDR-II Sync SRAM
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao