AS4C16M32MD1-5BCN IC DRAM 512MBIT PARALLEL 90FBGA Alliance Memory, Inc.
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Alliance Memory, Inc.
Product Description
Product Details
Features
• Organization: 1,048,576 words × 4 bits• High speed
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
• Low power consumption
- Active: 385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode (AS4C14400) or EDO (AS4C14405)
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
• Single 5V power supply
• ESD protection ≥ 2001V
• Latch-up current ≥ 200 mA
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tray Alternate Packaging |
| Package-Case | 90-VFBGA |
| Operating-Temperature | -25°C ~ 85°C (TJ) |
| Interface | Parallel |
| Voltage-Supply | 1.7 V ~ 1.95 V |
| Supplier-Device-Package | 90-FBGA (8x13) |
| Memory Capacity | 512M (16M x 32) |
| Memory-Type | Mobile DDR SDRAM |
| Speed | 200MHz |
| Format-Memory | RAM |
Descriptions
SDRAM - Mobile LPDDR Memory IC 512Mb (16M x 32) Parallel 200MHz 5ns 90-FBGA (8x13)
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao