CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT
Price:
1500
MOQ:
10
Delivery Time:
5-8days
Brand:
MACOM
Product Description
CGHV96050F2 Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)
Product Overview
The CGHV96050F2 is a high-performance GaN HEMT on Silicon Carbide (SiC) substrate from MACOM, designed for demanding RF and microwave applications with superior power density and thermal performance.
Technical Specifications
| Attribute | Value |
|---|---|
| Product Type | GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt |
| Package Dimensions | 3 mm x 3 mm x 0.75 mm (Ceramic) |
| Operating Voltage | 3.3 V |
| Frequency Range | DC to 110 GHz |
| Return Loss | 20 dB (Input & Output) |
| Temperature Range | -40°C to +85°C |
| Power Output | Up to 100 W |
| Gain | Up to 40 dB |
| Noise Figure | 0.5 dB |
| Package Quantity | 20 units |
Key Features
- High-frequency operation: 8.4-9.6 GHz range for demanding RF applications
- Exceptional efficiency: Excellent power-added efficiency with minimal degradation (<0.1 dB)
- Superior thermal performance: GaN-on-SiC technology for optimal heat dissipation
- Compact power solution: Higher power density than GaAs or Si-based alternatives
- Broadband capability: Wide bandwidth suitable for diverse applications
Primary Applications
Radar Systems:
- Marine radar for navigation and collision avoidance
- Weather monitoring for meteorological observation
- Air traffic control radar systems
Security & Monitoring:
- Maritime vessel traffic management
- Port security and coastal surveillance systems
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Company
Berton Electronics Limited
Location
Room 905 Dong Le Building , NanJi Road , Luohu District, Shenzhen,China.
Contact Person
Jessica