BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode

Price Negotiable

Price: 2.5

MOQ: 10

Delivery Time: Negotiable

Brand: Infineon Technologies

Product Description

BAT68E6327 Schottky Barrier Diode

Product Attributes

Manufacturer	Infineon Technologies
Part Number	BAT68E6327HTSA1
Description	RF Diode Schottky - Single 8V 130 mA 150 mW PG-SOT23

Product Description

The BAT68E6327 is a Schottky barrier diode from Infineon Technologies, designed for RF and high-frequency applications.

Key Features

Electrical Characteristics
- Peak Reverse Voltage (Vr): 8V
- Maximum Forward Current (If): 130mA
- Low Forward Voltage Drop (Vf): 390mV (typ) at 5mA
- Ultra-Low Capacitance: 1pF @ 0V, 1MHz
High-Frequency Performance
- Optimized for RF and microwave circuits due to fast switching and low noise
- Low series resistance (Rs): 10Ω @ 5mA, 10kHz
Package & Reliability
- SOT-23-3 (SC-59, TO-236-3) surface-mount package
- Wide temperature range: -55°C to +150°C
- RoHS compliant & lead-free

Applications

RF signal detection & mixing (e.g., VHF/UHF circuits)
Voltage clamping & protection circuits
High-speed data networks & wireless communication (e.g., base stations, satellite receivers)
Low-power signal rectification in portable electronics

Technical Summary

Package: SOT-23-3 (3-pin)

Power Dissipation: 150mW max

Equivalent Models: BAT68-07W, BAT68-08S (for alternate pinouts)