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cs7n60a2 high breakdown voltage mosfet

from 218 Products

7A600V High Breakdown Voltage Mosfet CS7N60A2 To-220F With Low Ciss

China 7A600V High Breakdown Voltage Mosfet CS7N60A2 To-220F With Low Ciss on sale
7A600V High Breakdown Voltage Mosfet CS7N60A2 To-220F With Low Ciss Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ CS7N60A2 TO-220F N 7 600 ±30 2 4 980 1300 24 1110......
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type

China EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type on sale
...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type

China EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type on sale
...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

Electric Vehicle Use Copper Litz Wire 2uew-F-Pi 0.40*60 High Breakdown Voltage Taped

China Electric Vehicle Use Copper Litz Wire 2uew-F-Pi 0.40*60 High Breakdown Voltage Taped on sale
...High Breakdown Voltage Taped Litz Wire The advantage of PI film is high stability. In high temperature and chemically corrosive environments, the signal transmission is reliable and not easily affected by external interference. In addition, PI film makes the circuit have better flexibility. Even if bent or rotated, it will not be damaged or affected. In terms of manufacturing process, PI film is highly...
Tianjin Ruiyuan Electric Material Co,.Ltd

Address: 22-2, Jinlian Business Park, Crossing Of Xinjiayuan Road And Lishuang Road, Jinnan Dist.

High Breakdown Voltage/ High Resistance Ceramic Heat Sink With 0.3-08Um Surface Roughness

China High Breakdown Voltage/ High Resistance Ceramic Heat Sink With 0.3-08Um Surface Roughness on sale
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Shenzhen Antac Technology Limited

Address: 23E,Jinrun mansion, NO.6019 Shennan Road, FUtian DIstrict, Shenzhen, Guangdong, China

Miniature Relays JTN1aS-PA-F-DC12V-Pana-sonic-Electromagnetic High breakdown voltage

China Miniature Relays JTN1aS-PA-F-DC12V-Pana-sonic-Electromagnetic High breakdown voltage on sale
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ShenZhen QingFengYuan Technology Co.,Ltd.

Address: Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

High Voltage MOSFET for Industrial Switching Power Supply with Great Heat Dissipation

China High Voltage MOSFET for Industrial Switching Power Supply with Great Heat Dissipation on sale
.... This type of MOSFET is a N type, which makes it suitable for a range of applications that require high voltage and/or ultra-high voltage power supply. High Voltage MOSFETs are designed for superior performance, with advanced thermal management and...
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

High Speed Power MOSFET IGBT Driver 3 Phase High Voltage Gate Driver

China High Speed Power MOSFET IGBT Driver 3 Phase High Voltage Gate Driver on sale
High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage...
Shanghai Juyi Electronic Technology Development Co., Ltd

Address: No. 1, lane 1199, yunping road, jiading district, Shanghai,China

Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V

China Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V on sale
...MOSFET P-Chan Drain-Source Breakdown Voltage 250 V Descriptions of Aviation Parts: Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs......
XIXIAN FORWARD TECHNOLOGY LTD

Address: Unit 4, Block B, Xi'an OE Park, No. 77, Keji 2nd Road, High-tech Zone, Xi'an, 710075, Shaanxi

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F

China N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F on sale
N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ......
Guangdong Huixin Electronics Technology Co., Ltd.

Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China

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