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Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet SVF765F [View Original] [BACK] 7A, 650V N-CHANNEL MOSFET Product：SVF7N65T/F/K/S 1、GENERAL DESCRIPTION SVF7N65T/F/K/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet-SVF2N60M/MJ/N/NF/F/T/D [View Original] [BACK] 2A, 600V N-CHANNEL MOSFET Product：SVF2N60M/MJ/N/NF/F/T/D General Description power MOS field effect transistor which is produced using SilanSVF2N60M/MJ/N/NF/F/T/D is an N-channel enhancement mode proprietary F-Cellstructure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet-SVF10N60T/F/S/K [View Original] [BACK] 10A, 600V N-CHANNEL MOSFET Product：SVF10N60T/F/S/K General Description SVF10N60T/F/S/K is anN-channel enhancement mode power MOSfieldeffecttransistorwhichisproducedusingSilan proprietary F-CellTMstructure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet-SVF7N60T/F/S/K/MJ/D [View Original] [BACK] 7A, 600V N-CHANNEL MOSFET Product：SVF7N60T/F/S/K/MJ/D General Description SVF7N60T/F/S/K/MJ/D is an N-channel enhancementmode power MOS field effect transistor which is produced using SilanproprietaryF-CellTMstructureVDMOStechnology.The improvedplanar stripecelland theimprovedguardring terminal have been especiallytailored to minimize on-state resistance

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet -SVF5N60T/F/D/MJ/K [View Original] [BACK] 5A, 600V N-CHANNEL MOSFET Product：SVF5N60T/F/D/MJ/K 一、General Description SVF5N60T/F/D/MJ/Kisan N-channelenhancementmode power MOS field effect transistor which is produced using Silan proprietary F-CellTMstructure VDMOS technology. The improvedplanar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance,

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet-SVF4N60D/F/T/K/M/MJ [View Original] [BACK] 4A, 600V N-CHANNEL MOSFET Product：SVF4N60D/F/T/K/M/MJ 一、General Description SVF4N60D/F/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTMstructure VDMOS technology. The improvedplanar stripecelland theimprovedguardring terminal have been especiallytailored to minimize on-state

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet-SVF3N80M/MJ/F/D/T [View Original] [BACK] 3A, 800V N-CHANNEL MOSFET Product：SVF3N80M/MJ/F/D/T 一、General Description SVF3N80M/MJ/F/D/T is an N-channelenhancement mode power MOS field effect transistor which is produced using Silanproprietary F-CellTM structure VDMOS technology.The improvedplanar stripecelland theimprovedguard ring terminal have been especiallytailored to minimize on-state resistance,

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet-SVF1N60AM/MJ/B/D/F/H [View Original] [BACK] 1A, 600V N-CHANNEL MOSFET Product：SVF1N60AM/MJ/B/D/F/H 一、General Description SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTMstructure VDMOS technology.Theimprovedplanar stripecelland theimprovedguardring terminal have been especially tailored to minimize on-state

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet-SVF8N60T/F [View Original] [BACK] 8A, 600V N-CHANNEL MOSFET Product：SVF8N60T/F 一、General Description SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which isproduced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailoredto minimize on-state resistance, provide

Location: Home -> Products -> Power discrete component -> Mosfet -> Mosfet-SVF12N65T/F/K/S [View Original] [BACK] 12A, 650V N-CHANNEL MOSFET Product：SVF12N65T/F/K/S 一、General Description SVF12N65T/F/K/S is an N-channel enhancement mode power MOS fieldeffect transistorwhich is produced usingSilanproprietaryF-CellTMstructure VDMOS technology. The 1improvedplanar stripecelland theimprovedguardring terminal have been especiallytailored to minimize on-state resistance, provide

Location: Home -> Products -> Power discrete component -> Schottky Doide/ Transistor -> Schottky Doide Transistor SBD10C100F [View Original] [BACK] 10A, 100V SCHOTTKY RECTIFIER Product：SBD10C100T/F/D/S 1、GENERAL DESCRIPTION SBD10C100T/F/D/S is schottky rectifier fabricated in silicon epitaxial planartechnology. Typical applications are in switching power supplies and protection circuit etc. 2、FEATURES (1).Guard ring for Stress Protection (2).High Surge Capacity (3).Low power

Location: Home -> Products -> Power discrete component -> Schottky Doide/ Transistor -> Schottky Doide Transistor SBD10C200F [View Original] [BACK] 10A, 200V SCHOTTKY RECTIFIER DIODE Product：SBD10C200T/F/D/S 1、GENERAL DESCRIPTION SBD10C200T/F/D/S is the schottky rectifier diode adopting Silicon epitaxial technology, it is widely used in switch power supply, protection circuits and so on. 2、FEATURES (1).Guard ring for over voltage protection (2).High current impulse capability

Location: Home -> Products -> Power discrete component -> Schottky Doide/ Transistor -> Schottky Doide Transistor SBD20C100F [View Original] [BACK] 20A, 100V SCHOTTKY RECTIFIER Product：SBD20C100T/F/K 1、GENERAL DESCRIPTION SBD20C100T/F/K is schottky rectifier fabricated in silicon epitaxial planartechnology. Typical applications are in switching power supplies and protection circuit etc. 2、FEATURES (1).Guard ring for Stress Protection (2).High Surge Capacity (3).Low power loss

Location: Home -> Products -> Power discrete component -> Schottky Doide/ Transistor -> Schottky Doide Transistor SBD20C200F [View Original] [BACK] 20A, 200V SCHOTTKY RECTIFIER Product：SBD20C100T/F/K/S 1、GENERAL DESCRIPTION SBD20C200T/F/K/S is the schottky rectifier diode adopting Silicon epitaxial technology, it is widely used in switch power supply, protection circuits and so on. 2、FEATURES （1）.Guard ring for over voltage protection （2）.High current impulse capability （3）

Location: Home -> Products -> Touch button IC -> Touch button IC-BF6910AX/11AX [View Original] [BACK] BF6910AX/11AX 一、Specification 1.1features Number of keys - 10/14/22 keys (Sensor can be reused for IO) - LP (low power mode) - low power mode: idle mode - communication mode - IIC (support for standard mode or quick mode) The key mode choice - each key can be run in an independent mode The power supply voltage: 2.7 ~ 5.5V - ROM - FLASH 8K - RAM - 512 bytes SRAM The self adapt

Location: Home -> Products -> Micro pressure sensor series -> HP sensor -> Micro pressure sensor HP203B [View Original] [BACK] PRECISION BAROMETER AND ALTIMETER SENSOR Product：HP203B 1、Descriptions The HP203B employs a MEMS pressure sensor with an I2C interface to provide accurate temperature,pressure or altitude data. The sensor pressure and temperature outputs are digitized by a high resolution 24-bit ADC. The altitude value is calculated by a specific patented algorithm

Location: Home -> Products -> Micro pressure sensor series -> HP sensor -> Micro pressure sensor HP204C [View Original] [BACK] I2C PRECISION BAROMETER AND ALTIMETER Product：HP204C 1、Descriptions The HP204C employs a MEMS pressure sensor with an I2C interface to provide accurate Temperature, Pressure or Altitude data. The sensor Pressure and Temperature outputs are digitized by a high resolution 24-bit ADC. The Altitudevalue is calculated by a specific patented algorithm

Location: Home -> Products -> Micro pressure sensor series -> HP sensor -> Micro pressure sensor HP206C [View Original] [BACK] I2C PRECISION BAROMETER AND ALTIMETER Product：HP204C 1、Descriptions The HP206C employs a MEMS pressure sensor with an I2C interface to provide accurate temperature,pressure or altitude data. The sensor pressure and temperature outputs are digitized by a high resolution 24-bit ADC. The altitude value is calculated by a specific patented algorithm

Location: Home -> Products -> Micro pressure sensor series -> Consensic sensor -> Micro pressure sensor CPS120B [View Original] [BACK] Digital Barometer Product：CPS120B 1、Overview The CPS120 is a capacitive absolute pressure sensor solution with a fully calibratedpressure and temperature compensated digital output for low pressure applications, such as barometric sensing. Low current consumption(

Location: Home -> Products -> Micro pressure sensor series -> Consensic sensor -> Micro pressure sensor CPS130 [View Original] [BACK] Water Resistant PressureSensor Product：CPS131 1、Overview The CPS131 Sip(System-in-a-Package) Solution comprises of a resistive bridge type pressure sensor and an 18-bit calibration math DSP for high resolution and accurate pressure measurements.The fully calibrated pressure and temperature compensated digital output makes the CPS131 Solution