Zhuhai Cersol Technology Co, Ltd
                                                                                                           
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Since 2020
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China High-Precision Alumina or silicon carbide Ceramic Wafer Loading Arm for sale

High-Precision Alumina or silicon carbide Ceramic Wafer Loading Arm

MOQ: MOQ 1pc
Delivery Time: USUALLY 1 MONTH
Brand: Cersol

Ceramic robotic arm plays a role in handling in semiconductor equipment. It is equivalent to the hand of the robot of the semiconductor equipment and is responsible for carrying wafer silicon chips to the specified location. Because the wafer silicon chip is extremely vulnerable to other particles, it is generally carried out in a vacuum environment. In this environment, the robotic arm of most materials is generally difficult to complete the work. Materials to make robotic

China Beam Silicon Carbide Products Silicon Carbide Bricks Silicon Carbide Burner Nozzle Rod Plate Etc for sale

Beam Silicon Carbide Products Silicon Carbide Bricks Silicon Carbide Burner Nozzle Rod Plate Etc

Price: Negotiable
MOQ: Negotiable
Delivery Time: USUALLY 1 MONTH

RSiC products are made by casting special treated high-purity SiC material and sintered in vacuum high temperature furnace. Technical Indexes: Item Index Max.working temprature Oxidising atmosphere(℃) 1650 Inert atmosphere(℃) 2300 Bending strength @20℃(MPa) 80-100 @1100℃(MPa) 100-120 Porosity(%) 15 Bulk density @20℃(g/cm3) 2.65-2.73 Young's modulus @20℃(GPa) 280 Thermal cnductivity @1200℃(W/MK) 26 Thermal expansion @20-1000℃(10-6K-1) 4.8 PH resistance 1-14 Classification:

China High Temperature Resistance Recrystallized Silicon Carbide Plates RSiC Batts in Sintering  Industry for sale

High Temperature Resistance Recrystallized Silicon Carbide Plates RSiC Batts in Sintering Industry

MOQ: 100pcs
Delivery Time: USUALLY 1 MONTH
Brand: Cersol

RSiC products are made by casting special treated high-purity SiC material and sintered in vacuum high temperature furnace. Technical Indexes: Item Index Max.working temprature Oxidising atmosphere(℃) 1650 Inert atmosphere(℃) 2300 Bending strength @20℃(MPa) 80-100 @1100℃(MPa) 100-120 Porosity(%) 15 Bulk density @20℃(g/cm3) 2.65-2.73 Young's modulus @20℃(GPa) 280 Thermal cnductivity @1200℃(W/MK) 26 Thermal expansion @20-1000℃(10-6K-1) 4.8 PH resistance 1-14 Classification:

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