Memory IC Chip

200MHz Memory Chips S27KS0642GABHI033 Self Refresh DRAM 24-FBGA 64Mbit HyperBus Product Description Of S27KS0642GABHI033 S27KS0642GABHI033 is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ interface, Pseudo SRAM Memory IC. The DRAM array uses dynamic cells that require periodic refresh. Specification Of S27KS0642GABHI033 Part Number: S27KS0642GABHI033 Write Cycle Time - Word, Page: 35ns Interface Support: 1.8 V / 3.0 V Memory Interface: HyperBus Data Throughput: Up To

S27KS0642GABHV020 DRAM HyperRAM Memory IC 64Mbit 24-VBGA Surface Mount Product Description Of S27KS0642GABHV020 S27KS0642GABHV020's DRAM cells cannot be refreshed during a read or write transaction, there is a requirement that the host limit read or write burst transfers lengths to allow internal logic refresh operations when they are needed. Specification Of S27KS0642GABHV020 Part Number: S27KS0642GABHV020 Density: 512Mb Supply Voltage: 1.7V ~ 2V Data Throughput: 400 MBps

Integrated Circuit Chip S80KS5122GABHA023 512Mb DRAM Memory With HYPERBUS Interface Product Description Of S80KS5122GABHA023 S80KS5122GABHA023 HYPERRAM™ 2.0 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Specification Of S80KS5122GABHA023 Part Number: S80KS5122GABHA023 Product Category: DRAM Technology: PSRAM (Pseudo SRAM) Memory Size:

SDRAM DDR4 Memory IC MT40A512M16LY-062E AAT:E Integrated Circuit Chip 8Gbit Parallel​ Product Description Of MT40A512M16LY-062E AAT:E MT40A512M16LY-062E AAT:E is 8Gbit Parallel, SDRAM - DDR4 Memory Chip, package is 96-FBGA (7.5x13.5), Surface Mount. Specification Of MT40A512M16LY-062E AAT:E Part Number: MT40A512M16LY-062E AAT:E Density: 8Gb Technology: SDRAM - DDR4 Package / Case: 96-TFBGA Clock Frequency: 1.6 GHz Memory Type: Volatile Features Of Memory Chip Write Cycle Time

Memory IC Chip MT41K64M16TW-107 AUT:J Automotive DDR3L SDRAM 96FBGA Memory IC​ Product Description Of MT41K64M16TW-107 AUT:J MT41K64M16TW-107 AUT:J The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Specification Of MT41K64M16TW-107 AUT:J Part Number MT41K64M16TW-107 AUT:J Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 1Gbit Memory

Integrated Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC Product Description Of MT40A1G16KH-062E AIT:E MT40A1G16KH-062E AIT:E is a high-speed dynamic random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KH-062E AIT:E Part Number MT40A1G16KH-062E AIT:E Supply Voltage - Max: 1.2 V Minimum Operating Temperature: - 40 C Maximum Operating Temperatur

Integrated Circuit Chip MT53E512M32D1NP-046 WT:B Memory IC 200WFBGA IC MEMORY DRAM​​ Product Description Of MT53E512M32D1NP-046 WT:B MT53E512M32D1NP-046 WT:B is Automotive DDR4 SDRAM, The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. Specification Of MT53E512M32D1NP-046 WT:B Part Number: MT53E512M32D1NP-046 WT:B Clock Frequency: 2.133 GHz Memory Interface: Parallel Supply Voltage(Min): 1.06V

SDRAM - DDR4 Memory IC MT40A4G8NEA-062E:F DDR4 32G 4GX8 FBGA DDP Product Description Of MT40A4G8NEA-062E:F MT40A4G8NEA-062E:F high-density devices enable system designers to take advantage of more available memory with the same number of placements, which can help to increase the bandwidth or supported feature set of a system. Specification Of MT40A4G8NEA-062E:F Part Number MT40A4G8NEA-062E:F Technology SDRAM - DDR4 Memory Size 32Gbit Memory Organization 4G x 8 Memory

SDRAM Mobile LPDDR5 Memory IC MT62F1G64D8CH-031 WT:B BGA496 Integrated Circuit Chip​ Product Description Of MT62F1G64D8CH-031 WT:B MT62F1G64D8CH-031 WT:B Memory - SDRAM Mobile LPDDR5 Memory IC, the package is BGA496, Surface Mount. Specification Of MT62F1G64D8CH-031 WT:B Part Number: MT62F1G64D8CH-031 WT:B Density: 64Gb Memory Format: DRAM Op. Temp.: -25°C ~ 85°C (TC) Voltage - Supply: 1.05V Technology: SDRAM - Mobile LPDDR5 Features Of Memory Chip Command/Address latency

Integrated Circuit Chip MT40A2G8SA-062E IT:F SDRAM DDR4 Memory IC 78FBGA IC Chip​ Product Description Of MT40A2G8SA-062E IT:F MT40A2G8SA-062E IT:F A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. Specification Of MT40A2G8SA-062E IT:F Part Number: MT40A2G8SA-062E IT:F Technology: SDRAM - DDR4 Pseudo Open

Chip Integrated Circuit MT53E512M32D1ZW-046 AUT:B SDRAM-Mobile Memory IC Product Description Of MT53E512M32D1ZW-046 AUT:B MT53E512M32D1ZW-046 AUT:B is SDRAM - Mobile LPDDR4X Memory IC 16Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5). Specification Of MT53E512M32D1ZW-046 AUT:B Part Number MT53E512M32D1ZW-046 AUT:B Memory Interface Parallel Clock Frequency 2.133 GHz Write Cycle Time - Word, Page 18ns Access Time 3.5 ns Voltage - Supply 1.06V ~ 1.17V Operating Temperature

Integrated Circuit Chip MT40A1G16TB-062E IT:F SDRAM DDR4 Memory IC 96FBGA 16Gbit Memory Chip​ Product Description Of MT40A1G16TB-062E IT:F MT40A1G16TB-062E IT:F The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. Specification Of MT40A1G16TB-062E IT:F Part Number MT40A1G16TB-062E IT:F Chipset Validation N/A Density 16Gb

ICs Chip MTA18ASF2G72HZ-2G6E1 Memory Cards Module DDR4 SDRAM 16GB 260-SODIMM Product Description Of MTA18ASF2G72HZ-2G6E1 MTA18ASF2G72HZ-2G6E1 modules utilizing 4- and 8-bit-wide DDR4 SDRAM devices have four internal bank groups consisting of four memory banks each, providing a total of 16 banks. Specification Of MTA18ASF2G72HZ-2G6E1 Part Number: MTA18ASF2G72HZ-2G6E1 Product Status: Active Memory Type: DDR4 SDRAM Memory Size: 16GB Transfer Rate (Mb/S, MT/S, MHz): 2666 Package

MT40A1G16KNR-062E:E SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 96-FBGA Product Description Of MT40A1G16KNR-062E:E MT40A1G16KNR-062E:E DR4 SDRAM Memory is rigorously tested for the extreme temperature and performance needs of industrial and automotive applications. Specification Of MT40A1G16KNR-062E:E Part Number: MT40A1G16KNR-062E:E Product Category: DRAM Supply Voltage - Max: 1.26 V Data Bus Width: 16 Bit Supply Current - Max: 84 MA Operating Temperature: 0°C ~ 95

Memory IC Chip MT40A1G16KH-062E AUT:E DRAM DDR4 16G 1GX16 FBGA Product Description Of MT40A1G16KH-062E AUT:E MT40A1G16KH-062E AUT:E DDR4 memory can also enable designers to maintain the same density with fewer placements, which helps to reduce costs. Specification Of MT40A1G16KH-062E AUT:E Part Number: MT40A1G16KH-062E AUT:E Memory Size: 16Gbit Memory Organization: 1G X 16 Memory Interface: Parallel Clock Frequency: 1.6 GHz Supplier Device Package: 96-FBGA (9x13) Features Of

16Gbit Memory Size MT40A1G16KD-062E:E SDRAM - DDR4 Memory IC 96-FBGA Package Product Description Of MT40A1G16KD-062E:E MT40A1G16KD-062E:E DDR4 (Double Data Rate 4) SDRAM is a high-speed dynamic random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E:E Part Number: MT40A1G16KD-062E:E Supply Voltage - Max: 1.26 V Supply Voltage - Min: 1.14 V Supply Current -

S40FC008C3B1V00000 Memory IC Chip 8GB 3.3V e.MMC Flash Memory VFBGA-153 Package [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996

KLMBG4GESD-B03P Memory IC Chip Automotive 32 GB eMMC 5.0 Flash Memory IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996,

Memory IC Chip KLUBG4G1ZF-C0CP 32GB UFS 2.1 Universal Flash Memory IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996,

Memory IC Chip KLUEG8UHYB-B0EP 256GB UFS 3.1 Universal Flash Memory Storage [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996,