GaN IC
LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated
GaN IC LMG3410R070RWHR Power Switch Driver GaN with integrated driver and protection Specifications Number of Drivers: 1 Driver Number of Outputs: 1 Output Output Current: 40 A Supply Voltage - Min: 9.5 V Supply Voltage - Max: 18 V Configuration: Non-Inverting Rise Time: 15 ns Fall Time: 4.2 ns Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Description LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve
LMG3422R030RQZR GaN FET 600V Integrated Isolated GaN Gate Drivers
GaN IC LMG3422R030RQZR 600V 30mΩ GaN FET With Integrated Driver Isolated Gate Drivers Description LMG3422R030RQZR GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. LMG3422R030RQZR integrates a silicon driver that enables switching speed up to 150 V/ns. Integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration,