GaN IC

GaN IC NV6138A 120mOhm N Channel Load Drivers IC 12A QFN30 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996, Mingjiada has

FET Driver LMG3411R070RWHR Power Distribution Switches P Channel 12A 32VQFN Load Drivers Specifications Features: Bootstrap Circuit, 5V Regulated Output Ratio - Input:Output: 1:1 Interface: Logic, PWM Voltage - Supply (Vcc/Vdd): 9.5V ~ 18V Current - Output (Max): 12A Fault Protection: Over Current, Over Temperature, UVLO Description LMG3411R070RWHR provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to

GaN IC LMG3410R070RWHR Power Switch Driver GaN with integrated driver and protection Specifications Number of Drivers: 1 Driver Number of Outputs: 1 Output Output Current: 40 A Supply Voltage - Min: 9.5 V Supply Voltage - Max: 18 V Configuration: Non-Inverting Rise Time: 15 ns Fall Time: 4.2 ns Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Description LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve

GaN IC LMG3422R030RQZR 600V 30mΩ GaN FET With Integrated Driver Isolated Gate Drivers Description LMG3422R030RQZR GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. LMG3422R030RQZR integrates a silicon driver that enables switching speed up to 150 V/ns. Integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration,