L Band Power Amplifier

20~520MHz L Band Solid State RF Power Amplifier for Satellite Communications with SMA- Kfd Connectors Description The RF (Radio Frequency) Power Amplifier is an electronic device used to enhance the power of RF signals. It is primarily used in wireless communication, radar systems, satellite communication, broadcast television, medical equipment, and other fields. The amplifier can amplify low-power RF signals to sufficient levels to ensure signal integrity and prevent

Customized 20~520MHz 100W 50dB RF Module Microwave Power Amplifier for radar, Communication Description The RF (Radio Frequency) Power Amplifier is an electronic device used to enhance the power of RF signals. It is primarily used in wireless communication, radar systems, satellite communication, broadcast television, medical equipment, and other fields. The amplifier can amplify low-power RF signals to sufficient levels to ensure signal integrity and prevent excessive

L Band Power Amplifier 1-2 GHz Psat 45.5 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

L Power Amplifier 0.5-2GHz Past 43 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

L Band Power Amplifier 1-2 GHz Psat 40 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

L Band Power Amplifier 0.5-2 GHz Psat CW 40 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

L Band Power Amplifier 960-1215 MHz Psat 60 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

L Band Power Amplifier 800-1000 MHZ P1dB RF Power Amplifier Description SWT-1-18 is a 500mW RF Amplifier operates with frequency range from 800 to 1000MHz. FEATURES · Frequency Range: 800-1000MHz · Gain: 18.5dB · P1dB: +27dBm · IP3: +37dBm · Noise Figure: 4.2dB · DC Power: 5V · SMA Connector Performance at 900MHz Electrical Specifications @ +25 °C, ZS = ZL = 50 Ω, Vcc=+5V Parameter Unit Minimum Typical Maximum Frequency Range MHz 800 1000 Gain f = 800MHz dB 19.5 f = 850MHz dB

L Band Power Amplifier 960-1215 MHz Psat 30 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

L Band Power Amplifier 1000-2000 MHz Psat 44 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

L Band Power Amplifier 1800-2200 MHz 100W Psat 50 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

L Band Power Amplifier 1600-2500 MHz 10 W Psat 40 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating