Nanjing Shinewave Technology Co., Ltd.
                                                                                                           
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China Powerful Rackmount Device 19 Inch 2000-4000 MHz 200W RF Power Amplifier For Microwave Communication for sale

Powerful Rackmount Device 19 Inch 2000-4000 MHz 200W RF Power Amplifier For Microwave Communication

Price: US Dollar (USD)18000/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

Powerful rackmount device 19-inch 2000-4000 MHz 200W RF Power Amplifier for microwave communication Product Description The 2000-4000 MHz 200W RF Power Amplifier is a powerful rackmount device designed for standard 19-inch racks with a height of 5U. It operates within a frequency range of 2000 to 4000 MHz and provides up to 200 Watts of output power, making it ideal for applications such as microwave communication, satellite transmission, and radar systems. With features like

China Linearity High Power Output 2000-4000 MHz 200W RF Power Amplifier For Radar System And Wireless Communication for sale

Linearity High Power Output 2000-4000 MHz 200W RF Power Amplifier For Radar System And Wireless Communication

Price: US Dollar (USD)18000/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

Linearity and High Power Output 2000-4000 MHz 200W RF Power Amplifier for Radar System and Wireless Communication Product Description The 2000-4000 MHz 200W RF Power Amplifier is a powerful rackmount device designed for standard 19-inch racks with a height of 5U. It operates within a frequency range of 2000 to 4000 MHz and provides up to 200 Watts of output power, making it ideal for applications such as microwave communication, satellite transmission, and radar systems. With

China Wide Bandwidth 2000-4000 MHz 200W RF Power Amplifier For Scientific Research for sale

Wide Bandwidth 2000-4000 MHz 200W RF Power Amplifier For Scientific Research

Price: US Dollar (USD)18000/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

Wide Bandwidth Characteristics 2000-4000 MHz 200W RF Power Amplifier for Scientific Research Product Description The 2000-4000 MHz 200W RF Power Amplifier is a powerful rackmount device designed for standard 19-inch racks with a height of 5U. It operates within a frequency range of 2000 to 4000 MHz and provides up to 200 Watts of output power, making it ideal for applications such as microwave communication, satellite transmission, and radar systems. With features like high

China Customized S Band Solid State Amplifier 2300-2500MHz RF Power Amplifier for Military Communication for sale

Customized S Band Solid State Amplifier 2300-2500MHz RF Power Amplifier for Military Communication

Price: US Dollar (USD)2209/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

Customized S Band Solid State Amplifier 2300-2500MHz RF Power Amplifier for Military Communication Description The 2300MHz-2550MHz AMPS (35W) S-band RF Power Amplifier is specifically designed for applications in the S-band frequency range. With a frequency range from 2300MHz to 2550MHz, it provides a power output of 35 watts, making it suitable for amplifying high-power RF signals. This amplifier finds wide application in S-band communication systems, including satellite

China 2-6GHz 50W 50Ω Silver S Band Amplifier Module RF Power Amplifier For Scientific Research for sale Video

2-6GHz 50W 50Ω Silver S Band Amplifier Module RF Power Amplifier For Scientific Research

Price: US Dollar (USD) 1-2/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

2-6GHz 50W 50Ω silver S Band Amplifier Module RF Power Amplifier for Scientific Research Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Outline Dimensional Drawing Specification RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating Frequency 2000 6000 MHz RF INPUT 0 5 dBm P-sat Power Output 47

China 1800~2200MHz 120W Low Noise RF Microwave Amplifier for EMC Test, Telecommunocation for sale

1800~2200MHz 120W Low Noise RF Microwave Amplifier for EMC Test, Telecommunocation

Price: US Dollar (USD) 1-2/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

1800~2200MHz 120W Low Noise RF Microwave Amplifier for EMC Test, Telecommunocation Description The RF (Radio Frequency) Power Amplifier is an electronic device used to enhance the power of RF signals. It is primarily used in wireless communication, radar systems, satellite communication, broadcast television, medical equipment, and other fields. The amplifier can amplify low-power RF signals to sufficient levels to ensure signal integrity and prevent excessive attenuation

China High Efficiency, Low Distortion 1.8-2.2GHz Gain 35dB Transmitter RF Power Amplifier for Wireless Networking for sale

High Efficiency, Low Distortion 1.8-2.2GHz Gain 35dB Transmitter RF Power Amplifier for Wireless Networking

Price: US Dollar (USD) 1-2/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

High Efficiency, Low Distortion 1.8-2.2GHz Gain 35dB Transmitter RF Power Amplifier for Wireless Networking Description The RF (Radio Frequency) Power Amplifier is an electronic device used to enhance the power of RF signals. It is primarily used in wireless communication, radar systems, satellite communication, broadcast television, medical equipment, and other fields. The amplifier can amplify low-power RF signals to sufficient levels to ensure signal integrity and prevent

China 3.3-3.8GHz 47dBm Output Power SMA- KFD Connectors Solid State RF Power Amplifier For Radar for sale Video

3.3-3.8GHz 47dBm Output Power SMA- KFD Connectors Solid State RF Power Amplifier For Radar

Price: US Dollar (USD) 1-2/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

3.3-3.8GHz 47dBm Output Power SMA- KFD Connectors Solid State RF Power Amplifier For Radar Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Outline Dimensional Drawing Specification RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating Frequency 3300 3800 MHz RF INPUT 0 dBm P-sat Power Output 47

China 50 W 700-2700MHz 47dBm S Band Power Amplifier for EMC Test, Telecommunocation for sale Video

50 W 700-2700MHz 47dBm S Band Power Amplifier for EMC Test, Telecommunocation

Price: US Dollar (USD) 1-2/pcs
MOQ: 1/pcs
Delivery Time: 5-8 working days

50 W 700-2700MHz 47dBm S Band Power Amplifier for EMC Test, Telecommunocation Description The 50W power amplifier operating in the S-band, covering frequencies from 700MHz to 2700MHz, and delivering a power output of 47dBm, is a crucial component in communication systems. Its key features include: Power Output: With a power output of 50 watts, it is suitable for driving various S-band applications such as satellite communication, radar systems, and some mobile communication

China 0.6 To 2.7 GHz S Band Power Amplifier Past CW 53 dBm VHF RF Amplifier for sale

0.6 To 2.7 GHz S Band Power Amplifier Past CW 53 dBm VHF RF Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

S Band Power Amplifier 0.6-2.7 GHz Past CW 53 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX

China 1 - 4 GHz S Band Power Amplifier P1dB 20 dBm RF Signal Amplifier for sale

1 - 4 GHz S Band Power Amplifier P1dB 20 dBm RF Signal Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

S Band Power Amplifier 1-4 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

China 1.1 - 2.3 GHz S Band Power Amplifier P1dB 20 dBm RF Power Amplifier Module for sale

1.1 - 2.3 GHz S Band Power Amplifier P1dB 20 dBm RF Power Amplifier Module

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

S Band Power Amplifier 1.1-2.3 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

China 0.7 - 4 GHz S Band Power Amplifier  P1dB 27 dBm RF Transmitter Amplifier for sale

0.7 - 4 GHz S Band Power Amplifier P1dB 27 dBm RF Transmitter Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

S Band Power Amplifier 0.7-4 GHz P1dB 27 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

China 2 To 3 GHz S Band Amplifier P1dB 20 dBm RF Operational Amplifier for sale

2 To 3 GHz S Band Amplifier P1dB 20 dBm RF Operational Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

S Band Power Amplifier 2-3 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

China 50 - 3000 MHz P1dB 14 dBm S Band Amplifier HF RF Power Amplifier 155MA for sale

50 - 3000 MHz P1dB 14 dBm S Band Amplifier HF RF Power Amplifier 155MA

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 work days

S Band Power Amplifier 50-3000 MHz P1dB 14 dBm RF Power Amplifier Description SWT-150T is a 50dB gain RF Amplifier, with frequency range of 50 MHz to 3000MHz. FEATURES · Frequency Range: 50-3000MHz · Gain: 50dB · P1dB: +14dBm · OIP3: +28dBm · Noise Figure: 3.6dB (typ.) · DC Power: 9V to 15V @ 155mA · SMA-female Electrical Specifications @+25 °C, Zin=Zout=50 Ω, Vsupply = +12VDC Parameter Unit Minimum Typical Maximum Frequency Range MHz 50 3000 Gain (S21) f = 50MHz f = 100MHz f

China 6 - 12 GHz P1dB 19 dBm S Band High Power Amplifier High Frequency for sale

6 - 12 GHz P1dB 19 dBm S Band High Power Amplifier High Frequency

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 work days

S Band Power Amplifier 6-12 GHz P1dB 19 dBm RF Power Amplifier Description SWT-158T is a high performance Microwave RF Amplifier, with standard frequency range of 6 to 12GHz. FEATURES · Frequency Range: 6-12GHz · Gain: 19dB · P1dB: +19dBm · OIP3: +26dBm · Noise Figure: 5.5dB (typ.) · DC Power: 9V to 15V @ 105mA · SMA-female connectorized Electrical Specifications @+25 °C, Zin=Zout=50 Ω, Vsupply = +12VDC Parameter Unit Minimum Typical Maximum Frequency Range GHz 6 12 Gain (S21

China 700 - 850 MHz S Band Power Amplifier Psat 42 dBm  Digital RF Amplifier for sale

700 - 850 MHz S Band Power Amplifier Psat 42 dBm Digital RF Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 work days

S Band Power Amplifier 700-850 MHz Psat 42 dBm RF Power Amplifier Description SWT-775 is a 10Watt (+40dBm) output RF Power Amplifier operating from single 12V DC power supply with frequency range in 700-850MHz. FEATURES · Frequency Range: 700-850MHz · Gain: 43dB · Pout: +40dBm · Psat: +42dBm · IP3: +49dBm · DC Power: 12V · SMA Connector Performance measured @ 775MHz Electrical Specifications @+25 °C, Zin=Zout=50 Ω, Vsupply = +12VDC Parameter Unit Minimum Typical Maximum

China 2.1 - 2.2 GHz S Band Power Amplifier  Psat CW 200 W Balanced RF Amplifier for sale

2.1 - 2.2 GHz S Band Power Amplifier Psat CW 200 W Balanced RF Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

S Band Power Amplifier 2.1-2.2 GHz Psat CW 200 W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX

China 100 To 3000 MHz S Band Power Amplifier P1dB +18dBm RF Broadband HF Amplifier for sale

100 To 3000 MHz S Band Power Amplifier P1dB +18dBm RF Broadband HF Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 work days

S Band Power Amplifier 100-3000 MHz P1dB +18dBm RF Power Amplifier Description SWT-140T is a 43dB gain RF Amplifier, with frequency range of 100 MHz to 3000MHz. FEATURES · Frequency Range: 100-3000MHz · Gain: 43dB · P1dB: +18dBm · OIP3: +35dBm · Noise Figure: 3.6dB (typ.) · DC Power: 12V to 15V @ 190mA · SMA-female Electrical Specifications @+25 °C, Zin=Zout=50 Ω, Vsupply = +12VDC Parameter Unit Minimum Typical Maximum Frequency Range MHz 100 3000 Gain (S21) f = 100MHz f =

China 2 - 4 GHz 18dB S Band Power Amplifier  P1dB 20 dBm RF Power Amplifier for sale

2 - 4 GHz 18dB S Band Power Amplifier P1dB 20 dBm RF Power Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

S Band Power Amplifier 2-4 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT