C Band Power Amplifier

C Band Power Amplifier 3700-4200 MHZ Past 66 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

C Band Power Amplifier 0.5-8 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 5-6 GHz P1dB 23 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 1-6 GHz Psat 70 W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 2-8 GHz P1dB 23 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 2-6GHz P1dB 23 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 4200-4500 MHZ Psat 53 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

C Band Power Amplifier 0.7-6 GHz Psat CW 60 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 2-6 GHz Past CW 40 W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 2-8 GHz Psat CW 50W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 4-8 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 0.8-6 GHz P1dB 25 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 5700-5900 MHZ Psat 47dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

C Band Power Amplifier 1.85 to 6.25 GHz RF Power Amplifier Description Model Number SWT-40-2G6G-15LM-SFF-HS is a 1.85 to 6.25 GHz limiting amplifier. This model operates with an input power range of-15 to +17dBm and maintains a limited output of+15dBm minimum. The unit is hermetically sealed. Specifications: Frequency Range: 1.85 to 6.25 GHz Noise Figure: 5.5dB Max. @ +25C 6.0dB max. @ +85C Gain: 35 dB Min Gain Variation over Temp: +/-4.0dB Max. (-55°C to +85°C) Gain Flatness

C Band Power Amplifier 5700-5900 MHZ Psat 43 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

C Band Power Amplifier 0.7-6 GHz Psat 31 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 3-5 GHz P1dB 36 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 4-8 GHz Psat CW 25Watt RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX UNIT

C Band Power Amplifier 4200-4500 MHZ Psat 66 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating

C Band Power Amplifier 3700-4200 MHZ Past 53 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating