Guard Ring For Overvoltage Protection Schottky Diode With RoHS​
 

Advantage
 

SBD has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the highest is only about 100V, which limits its application range. Such as freewheeling diodes of power switching devices in switching power supply (SMPS) and power factor correction (PFC) circuits, high-frequency rectifier diodes above 100V for transformer secondary, high-speed diodes of 600V~1.2kV in RCD snubber circuits, and For 600V diodes used in PFC step-up, only fast recovery epitaxial diodes (FRED) and ultra-fast recovery diodes (UFRD) are used. The reverse recovery time Trr of UFRD is also more than 20ns, which cannot meet the needs of 1MHz~3MHz SMPS in fields such as space stations. Even for an SMPS with hard switching at 100kHz, due to the large conduction loss and switching loss of UFRD, the case temperature is high, and a large heat sink is required, which increases the size and weight of the SMPS, which does not meet the miniaturization and thinning requirements. development trend. Therefore, the development of high-voltage SBDs above 100V has always been a research topic and a focus of attention. In recent years, SBD has made breakthrough progress, 150V and 200V high-voltage SBDs have been listed, and the SBD of more than 1kV made of new materials has also been successfully developed, thus injecting new vitality and vitality into its application.
 

Features
 

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
 

Applications
 

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications
 

MAIN CHARACTERISTICS
 

IF(AV)	10(2×5)A
VF(max)	0.7V (@Tj=125°C)
Tj	175 °C
VRRM	100 V

 

PRODUCT MESSAGE
 

Model	Marking	Package
MBR10100	MBR10100	TO-220C
MBRF10100	MBRF10100	TO-220F
MBR10100S	MBR10100S	TO-263
MBR10100R	MBR10100R	TO-252
MBR10100V	MBR10100V	TO-251
MBR10100C	MBR10100C	TO-220

 

ABSOLUTE RATINGS (Tc=25°C)
 

Parameter			Symbol	Value	Unit
Repetitive peak reverse voltage			VRRM	100	V
Maximum DC blocking voltage			VDC	100	V
Average forward current	TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)	per device   per diode	IF(AV)	10 5	A
Surge non repetitive forward current  8.3 ms single half-sine-wave (JEDECMethod)			IFSM	120	A
Maximum junction temperature			Tj	175	°C
Storage temperature range			TSTG	-40~+150	°C