IPD70R1K4P7S Series 700V CoolMOS P7 Power Transistor Field Effect MOS Tube
IPD70R1K4P7S Series 700V CoolMOS P7 Power Transistor Field Effect MOS Tube
Features
• Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
• Excellent thermal behavior
• Integrated ESD protection diode
• Low switching losses (Eoss)
• Product validation acc. JEDEC Standard
Benefits
• Cost competitive technology
• Lower temperature
• High ESD ruggedness
• Enables efficiency gains at higher switching frequencies
• Enables high power density designs and small form factors
Potential applications
Recommended for Flyback topologies for example used in Chargers,
Adapters, Lighting Applications, etc.
| Parameter | Value | Unit |
| VDS @ Tj=25°C | 700 | V |
| RDS(on),max | 1.4 | Ω |
| Qg,typ | 4.7 | nC |
| ID,pulse | 8.2 | A |
| Eoss @ 400V | 0.6 | μJ |
| V(GS)th,typ | 3 | A |
| ESD class (HBM) | 1C | / |
| Type / Ordering Code | Package | Marking | Related Links |
| IPD70R1K4P7S | PG-TO 252-3 | 70S1K4P7 | see Appendix A |
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