Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
Toshiba IGBT Power Module MG200Q1US51 Transistor Module
MG200Q1US51
Product Description
Manufactured by: Toshiba America, Inc.
Part number: MG200Q1US51
Part Category: Transistors
Description: 300A, 1200V, N-CHANNEL IGBT
Collector-Emitter Voltage: 1200V
Gate-Emitter Voltage: 20V
Collector Current (DC): 300A
Forward Current: (DC): 200A
Collector Power Dissipation: 1500W
Junction Temperature: 150C
Isolation Voltage (AC 1 min.): 2500V
Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF
Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=15V, RG=4.7Ω)
-Turn-on Time: 0.05s typ.
-Rise Time: 0.05s typ.
-Turn-on Time: 0.2s typ.
-Turn-off Delay Time: 0.5s typ.
-Fall Time: 0.1s typ. ; 0.3s max.
-Turn-off Time: 0.6s typ.
Forward Voltage(IF=200A, VGE=0): 2.4V typ. ;3.5V max
Reverse Recovery Time: 0.15s typ. ; 0.3s max.
(IF=200A, VGE=-10V, di/dt=700A/s)
High input impedance
High Speed
Low saturation voltage
Enhancement-mode
Electrodes are isolated from case
F&A
Do you have any partner in this field?
Our company has good-relationship partners in automation control field. So we can alwasy get supporot for price and stock.
What is your forecast for this industry?
As more and more work done by machine,our field has lofty propect for many years.
What is your resources?
Our team and our channel both in purchasing and sales.
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