N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching
Price:
negotiate
MOQ:
20 pcs
Delivery Time:
2-3 working days
Brand:
IOR
Product Description
IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching
| Features |
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Advanced Process Technology
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Ultra Low On-Resistance
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Lead-Free
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| Description |
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Advanced HEXFET® Power MOSFETs from
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International Rectifier utilize advanced processing
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techniques to achieve extremely low on-resistance per
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silicon area. This benefit, combined with the fast
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switching speed and ruggedized device design that
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HEXFET power MOSFETs are well known for, provides
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the designer with an extremely efficient and reliable
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device for use in a wide variety of applications.
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The D2Pak is a surface mount power package capable of
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accommodating die sizes up to HEX-4. It provides the
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highest power capability and the lowest possible on-
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resistance in any existing surface mount package. The
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D2Pak is suitable for high current applications because of
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its low internal connection resistance and can dissipate up
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to 2.0W in a typical surface mount application.
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The through-hole version (IRF540NL) is available for low-
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profile applications.
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Product Attributes
| FET Type | N-Channel |
| Technology | MOSFET |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 33A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
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Company
Shenzhen Koben Electronics Co., Ltd.
Location
C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Contact Person
Zhu