SRAM IS61WV25616BLL-10TLI 4Mb Asynchronous Memory IC - 10ns TSOP44 2.4V-3.6V
Price:
Negotiation
MOQ:
1 piece
Delivery Time:
3-5 work days
Product Description
Product Overview
The ISSI IS61WV25616BLL-10TLI is a high-performance 4Mb asynchronous static RAM organized as 262,144 words by 16 bits. This CMOS-based memory IC delivers reliable operation with low power consumption in industrial and automotive applications.
Key Features
High-Speed Performance
- Fast 10ns access time
- Low active power: 85mW typical
- Low standby power: 7mW typical (CMOS standby)
Technical Specifications
- Single power supply: 2.4V to 3.6V
- Fully static operation - no clock or refresh required
- Three-state outputs for bus compatibility
- Data control for upper and lower bytes
- Industrial and automotive temperature support
- Lead-free packaging available
Electrical Characteristics
VDD = 3.3V ±5%
| Symbol | Parameter | Test Conditions | Min. | Max. | Unit |
|---|---|---|---|---|---|
| VOH | Output HIGH Voltage | VDD = Min., IOH = -4.0 mA | 2.4 | -- | V |
| VOL | Output LOW Voltage | VDD = Min., IOL = 8.0 mA | -- | 0.4 | V |
| VIH | Input HIGH Voltage | 2 | VDD + 0.3 | V | |
| VIL | Input LOW Voltage | -0.3 | 0.8 | V |
VIL (min.) = -0.3V DC; VIL (min.) = -2.0V AC (pulse width
Package Information
Available in JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm) packages for flexible integration into various system designs.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Location
ZHUOYUEHUI A2603 ZHUOYUEHUI CENTER PLAZA(SOUTH AREA) NO.126 ZHONGKANG ROAD MEIDU COMMUNITY MEILIN STREET
Contact Person
Carol