H9HCNNNBUUMLHR 16Gb LPDDR4 BGA200 DRAM Memory Chip for Personal Computers with 1.8V-1.1V Operation

Price Negotiable

Price: Negotiation

MOQ: 1 package

Delivery Time: 3-5 work days

Product Description

Product Overview

H9HCNNNBUUMLHR 16Gb LPDDR4 BGA200 DRAM memory chip designed for personal computer applications, offering high-performance memory storage with low power consumption.

Technical Specifications

Part Number: H9HCNNNBUUMLHR

Density: 16Gb
Organization: x16
Voltage: 1.8V-1.1V-1.1V
Speed Grade: L
Power: Low Power
Package: BGA200
Status: Mass Production

Key Features

VDD1 = 1.8V (1.7V to 1.95V)
VDD2, VDDCA and VDDQ = 1.1V (1.06 to 1.17)
VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI)
Single data rate architecture for command and address
Double data rate architecture for data bus
Differential clock inputs (CK_t, CK_c)
Bi-directional differential data strobe (DQS_t, DQS_c)
DMI pin support for write data masking and DBIdc functionality
Programmable RL (Read Latency) and WL (Write Latency)
Burst length: 16 (default), 32 and On-the-fly
Auto refresh and self refresh support
All bank auto refresh and directed per bank auto refresh
Auto TCSR (Temperature Compensated Self Refresh)
PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
Background ZQ Calibration

Compatible Products

Part No.	Density	Organization	Voltage	Speed	Power	Package	Status
H9HCNNNBUUMLHR	16Gb	x16	1.8V-1.1V-1.1V	L	Low Power	200	Mass production
H9HKNNNBTUMUAR	16Gb	x16	1.8V-1.1V-1.1V	L	Low Power	272	Mass production
H9HKNNNBTUMUBR	16Gb	x16	1.8V-1.1V-1.1V	L	Low Power	366	Mass production
H9HKNNNDGUMUAR	24Gb	x16	1.8V-1.1V-1.1V	L	Low Power	272	Mass production
H9HKNNNDGUMUBR	24Gb	x16	1.8V-1.1V-1.1V	L / M	Low Power	366	Mass production
H9HKNNNCTUMUAR	32Gb	x16	1.8V-1.1V-1.1V	L	Low Power	272	Mass production
H9HKNNNCTUMUBR	32Gb	x16	1.8V-1.1V-1.1V	L / M	Low Power	366	Mass production