H9HCNNN4KMMLHR LPDDR4 4Gb DRAM Memory Chip - BGA200 Package, 3200-3733 Mbps Speed

Price Negotiable

Price: Negotiation

MOQ: 1 package

Delivery Time: 3-5 work days

Product Description

H9HCNNN4KMMLDR LPDDR4 4Gb Memory Chip

Key Technical Features

Operating voltages: VDD1 = 1.8V (1.7V-1.95V), VDD2/VDDCA = 1.1V (1.06V-1.17V), VDDQ = 0.6V (0.57V-0.65V)
Single data rate architecture for command/address
Double data rate architecture for data bus
Differential clock inputs (CK_t, CK_c)
Bi-directional differential data strobe (DQS_t, DQS_c)
Programmable read latency (RL) and write latency (WL)
Configurable burst length: 16 (default), 32, and On-the-fly
Auto refresh and self refresh with temperature compensation
Background ZQ calibration

Product Specifications

Part Number	Density	Organization	Voltage	Speed	Power	Package	Status
H9HCNNN4KMMLHR	4Gb	x16	1.8V-1.1V-0.6V	L/M	Low Power	200	Mass Production
H9HCNNN4KUMLHR	4Gb	x16	1.8V-1.1V-1.1V	L/M	Low Power	200	Mass Production
H9HCNNN8KUMLHR	8Gb	x16	1.8V-1.1V-1.1V	L/M	Low Power	200	Mass Production
H9HCNNNBKMMLHR	16Gb	x16	1.8V-1.1V-0.6V	M/E	Low Power	200	Mass Production
H9HCNNNBKUMLHR	16Gb	x16	1.8V-1.1V-1.1V	M/E	Low Power	200	Mass Production
H9HCNNNBPUMLHR	16Gb	x16	1.8V-1.1V-1.1V	L/M	Low Power	200	Mass Production
H9HCNNNCPMMLHR	32Gb	x16	1.8V-1.1V-0.6V	M/E	Low Power	200	Mass Production
H9HCNNNCPUMLHR	32Gb	x16	1.8V-1.1V-1.1V	M/E	Low Power	200	Mass Production