TC58NVG0S3HBAI4 1Gb NAND Flash Memory Chip 25ns Access Time 2.7-3.6V Parallel Interface 63-TFBGA
Price:
Negotiation
MOQ:
1 piece
Delivery Time:
3-5 work days
Product Description
Product Overview
The TC58NVG0S3HBAI4 is a high-performance NAND flash memory chip designed for industrial applications requiring reliable non-volatile storage. Manufactured by Toshiba Memory America, this 1Gb SLC NAND flash offers excellent endurance and fast access times.
Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Type | Non-Volatile FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Access Time | 25ns |
| Write Cycle Time | 25ns |
| Voltage Supply | 2.7V - 3.6V |
| Operating Temperature | -40°C to 85°C |
| Package Type | 63-VFBGA (63-TFBGA 9x11) |
| Mounting Type | Surface Mount |
| Manufacturer | Toshiba Memory America, Inc. |
Key Features
- Single-Level Cell (SLC) NAND technology for enhanced reliability
- Fast 25ns access and write cycle times
- Wide operating voltage range (2.7V - 3.6V)
- Industrial temperature range (-40°C to 85°C)
- Compact 63-TFBGA package for space-constrained applications
- Parallel interface for high-speed data transfer
Product Documentation
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Location
ZHUOYUEHUI A2603 ZHUOYUEHUI CENTER PLAZA(SOUTH AREA) NO.126 ZHONGKANG ROAD MEIDU COMMUNITY MEILIN STREET
Contact Person
Carol