SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
                                                                                                           
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TC58BYG1S3HBAI6 2GB NAND Flash Memory Chip 1.8V 67-pin VFBGA for Industrial Applications

Price Negotiable
Price: Negotiation
MOQ: 1 piece
Delivery Time: 3-5 work days
Product Description
TC58BYG1S3HBAI6 2GB NAND Flash Memory Chip Overview
TC58BYG1S3HBAI6 2GB NAND Flash Memory Chip product image
The TC58BYG1S3HBAI6 is a high-performance 2 Gbit NAND flash memory chip featuring 1.8V operation voltage and industrial-grade reliability. This 67-pin VFBGA package device offers advanced error correction and efficient data management for demanding applications.
Key Specifications
Parameter Value
Density 2 Gb (256 MWords)
Operating Voltage 1.7V - 1.95V (Typical 1.8V)
Interface Type Serial
Cell Type SLC NAND
Page Size 2 KB
Block Size 128 KB + 4 KB
Operating Temperature -40°C to 85°C
Package 67-pin VFBGA
Dimensions 8 x 6.5 x 0.74 mm (Max)
Advanced Features
  • Built-in ECC logic corrects 8-bit read errors per 528 bytes
  • Automatic erase and program operations for simplified integration
  • 2112-byte static register for efficient data transfer
  • Industrial screening level for reliable performance
  • Synchronous timing for optimized data throughput
Application Areas
Ideal for solid-state file storage systems, voice recording applications, image file memory for digital cameras, and other high-density non-volatile memory requirements in industrial and commercial systems.
TC58BYG1S3HBAI6 flash memory chip technical features diagram TC58BYG1S3HBAI6 memory architecture and block organization

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Company SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Location ZHUOYUEHUI A2603 ZHUOYUEHUI CENTER PLAZA(SOUTH AREA) NO.126 ZHONGKANG ROAD MEIDU COMMUNITY MEILIN STREET
Contact Person Carol

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