MT29F2G08ABAE 2Gb Parallel NAND Flash Memory 2.7V-3.6V 63-pin VFBGA Industrial Grade
Price:
Negotiation
MOQ:
1260PCS/BOX
Delivery Time:
3-5 work days
Product Description
MT29F2G08ABAE Parallel NAND Flash Memory Overview
Industrial-grade 2Gb SLC NAND flash memory with parallel interface, designed for reliable data storage in demanding applications requiring high endurance and wide temperature operation.
Key Specifications
- 2Gb Density - 256M Words x 8-bit organization
- 2.7V-3.6V operating voltage range
- -40°C to 85°C industrial temperature range
- 100,000 program/erase cycles (typical)
- 63-pin VFBGA package (11mm x 9mm)
Technical Specifications
Memory Architecture
| Cell Type | SLC NAND |
| Density | 2Gb (256M x 8-bit) |
| Architecture | Sectored with Boot Block |
| Block Organization | Symmetrical |
| Page Size | 2KB |
| Sector Size | 128KB x 2048 |
Electrical Characteristics
| Operating Voltage | 2.7V - 3.6V |
| Typical Voltage | 3.3V |
| Operating Current | 35mA |
| Program Current | 35mA |
| Programming Time | 0.6ms/Page |
| Erase Time | 0.003s/Block |
Interface & Performance
| Interface Type | Parallel |
| Timing Type | Asynchronous |
| ECC Support | Yes |
| Page Mode Support | Yes |
| Endurance | 100,000 cycles (typical) |
Physical Characteristics
| Package | 63-pin VFBGA |
| Dimensions | 11mm x 9mm x 0.75mm (max) |
| Mounting | Surface Mount |
| Lead Finish | Tin/Silver/Copper |
Environmental & Compliance
| Operating Temperature | -40°C to 85°C |
| Supplier Temperature Grade | Industrial |
| EU RoHS | Compliant |
| ECCN (US) | 3A991.b.1.a |
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Company
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Location
ZHUOYUEHUI A2603 ZHUOYUEHUI CENTER PLAZA(SOUTH AREA) NO.126 ZHONGKANG ROAD MEIDU COMMUNITY MEILIN STREET
Contact Person
Carol